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Article: Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system

TitleFormation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 76 n. 2, p. 152-154 How to Cite?
AbstractIt has recently been suggested that the thin degenerate layer found at the GaN/sapphire interface results from a high concentration of stacking faults. The studies of this letter, however, show that this is not the most likely explanation for the presence of such a degenerate layer. Using x-ray energy-dispersive spectroscopy and secondary ion-mass spectroscopy, profile distributions of elements Ga, N, O, C, and Al, near the interface, have been obtained. The distributions reveal very high O and Al concentrations in the GaN film within 0.2 μm from the interface, together with a material depletion of Ga and N. Such conditions strongly favor n + conductivity in this interfacial region because not only are N-vacancy and N-site O donors present, but Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-layer (film plus interface) conduction has been modeled, and the effect of conduction in the GaN film thus isolated. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42193
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, XLen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorZhang, QLen_HK
dc.contributor.authorZhan, HHen_HK
dc.contributor.authorSun, BQen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorWong, PCen_HK
dc.date.accessioned2007-01-08T02:31:22Z-
dc.date.available2007-01-08T02:31:22Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 76 n. 2, p. 152-154en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42193-
dc.description.abstractIt has recently been suggested that the thin degenerate layer found at the GaN/sapphire interface results from a high concentration of stacking faults. The studies of this letter, however, show that this is not the most likely explanation for the presence of such a degenerate layer. Using x-ray energy-dispersive spectroscopy and secondary ion-mass spectroscopy, profile distributions of elements Ga, N, O, C, and Al, near the interface, have been obtained. The distributions reveal very high O and Al concentrations in the GaN film within 0.2 μm from the interface, together with a material depletion of Ga and N. Such conditions strongly favor n + conductivity in this interfacial region because not only are N-vacancy and N-site O donors present, but Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-layer (film plus interface) conduction has been modeled, and the effect of conduction in the GaN film thus isolated. © 2000 American Institute of Physics.en_HK
dc.format.extent53990 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleFormation mechanism of a degenerate thin layer at the interface of a GaN/sapphire systemen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=76&issue=2&spage=152&epage=154&date=2000&atitle=Formation+mechanism+of+a+degenerate+thin+layer+at+the+interface+of+a+GaN/sapphire+systemen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.125686en_HK
dc.identifier.scopuseid_2-s2.0-0000190882en_HK
dc.identifier.hkuros47679-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000190882&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume76en_HK
dc.identifier.issue2en_HK
dc.identifier.spage152en_HK
dc.identifier.epage154en_HK
dc.identifier.isiWOS:000084541000008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231667600en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridZhang, QL=8120483600en_HK
dc.identifier.scopusauthoridZhan, HH=8120483700en_HK
dc.identifier.scopusauthoridSun, BQ=7401984315en_HK
dc.identifier.scopusauthoridWang, JN=7701333904en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK
dc.identifier.scopusauthoridWong, PC=7403979899en_HK

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