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Article: Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system

TitleFormation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 76 n. 2, p. 152-154 How to Cite?
AbstractIt has recently been suggested that the thin degenerate layer found at the GaN/sapphire interface results from a high concentration of stacking faults. The studies of this letter, however, show that this is not the most likely explanation for the presence of such a degenerate layer. Using x-ray energy-dispersive spectroscopy and secondary ion-mass spectroscopy, profile distributions of elements Ga, N, O, C, and Al, near the interface, have been obtained. The distributions reveal very high O and Al concentrations in the GaN film within 0.2 μm from the interface, together with a material depletion of Ga and N. Such conditions strongly favor n + conductivity in this interfacial region because not only are N-vacancy and N-site O donors present, but Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-layer (film plus interface) conduction has been modeled, and the effect of conduction in the GaN film thus isolated. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42193
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, XLen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorZhang, QLen_HK
dc.contributor.authorZhan, HHen_HK
dc.contributor.authorSun, BQen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorWong, PCen_HK
dc.date.accessioned2007-01-08T02:31:22Z-
dc.date.available2007-01-08T02:31:22Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 76 n. 2, p. 152-154-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42193-
dc.description.abstractIt has recently been suggested that the thin degenerate layer found at the GaN/sapphire interface results from a high concentration of stacking faults. The studies of this letter, however, show that this is not the most likely explanation for the presence of such a degenerate layer. Using x-ray energy-dispersive spectroscopy and secondary ion-mass spectroscopy, profile distributions of elements Ga, N, O, C, and Al, near the interface, have been obtained. The distributions reveal very high O and Al concentrations in the GaN film within 0.2 μm from the interface, together with a material depletion of Ga and N. Such conditions strongly favor n + conductivity in this interfacial region because not only are N-vacancy and N-site O donors present, but Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-layer (film plus interface) conduction has been modeled, and the effect of conduction in the GaN film thus isolated. © 2000 American Institute of Physics.en_HK
dc.format.extent53990 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2000, v. 76 n. 2, p. 152-154 and may be found at https://doi.org/10.1063/1.125686-
dc.subjectPhysics engineeringen_HK
dc.titleFormation mechanism of a degenerate thin layer at the interface of a GaN/sapphire systemen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=76&issue=2&spage=152&epage=154&date=2000&atitle=Formation+mechanism+of+a+degenerate+thin+layer+at+the+interface+of+a+GaN/sapphire+systemen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.125686en_HK
dc.identifier.scopuseid_2-s2.0-0000190882en_HK
dc.identifier.hkuros47679-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000190882&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume76en_HK
dc.identifier.issue2en_HK
dc.identifier.spage152en_HK
dc.identifier.epage154en_HK
dc.identifier.isiWOS:000084541000008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231667600en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridZhang, QL=8120483600en_HK
dc.identifier.scopusauthoridZhan, HH=8120483700en_HK
dc.identifier.scopusauthoridSun, BQ=7401984315en_HK
dc.identifier.scopusauthoridWang, JN=7701333904en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK
dc.identifier.scopusauthoridWong, PC=7403979899en_HK

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