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Article: Thermally induced conduction type conversion in n-type InP

TitleThermally induced conduction type conversion in n-type InP
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1999, v. 86 n. 4, p. 2361-2363 How to Cite?
Abstractn-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42192
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorXu, XLen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorChen, XDen_HK
dc.date.accessioned2007-01-08T02:31:21Z-
dc.date.available2007-01-08T02:31:21Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal Of Applied Physics, 1999, v. 86 n. 4, p. 2361-2363en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42192-
dc.description.abstractn-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.en_HK
dc.format.extent37880 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleThermally induced conduction type conversion in n-type InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=86&issue=4&spage=2361&epage=2363&date=1999&atitle=Thermally+induced+conduction+type+conversion+in+n-type+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.371057en_HK
dc.identifier.scopuseid_2-s2.0-0042995507en_HK
dc.identifier.hkuros47339-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042995507&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue4en_HK
dc.identifier.spage2361en_HK
dc.identifier.epage2363en_HK
dc.identifier.isiWOS:000081720600094-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231669100en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK

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