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Article: Thermally induced conduction type conversion in n-type InP

TitleThermally induced conduction type conversion in n-type InP
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 86 n. 4, p. 2361-2363 How to Cite?
Abstractn-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42192
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFung, Sen_HK
dc.contributor.authorZhao, YWen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorXu, XLen_HK
dc.contributor.authorSun, NFen_HK
dc.contributor.authorSun, TNen_HK
dc.contributor.authorChen, XDen_HK
dc.date.accessioned2007-01-08T02:31:21Z-
dc.date.available2007-01-08T02:31:21Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 86 n. 4, p. 2361-2363-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42192-
dc.description.abstractn-type semiconducting InP is changed into p-type semiconducting by short time annealing at 700 °C. Further annealing for a longer time leads to a second conduction-type conversion changing the material back to n type again but with a much higher resistivity. These conduction conversions indicate the formation of both acceptor and donor defects and the progressive variation of their relative concentrations during annealing. © 1999 American Institute of Physics.en_HK
dc.format.extent37880 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 86 n. 4, p. 2361-2363 and may be found at https://doi.org/10.1063/1.371057-
dc.subjectPhysics engineeringen_HK
dc.titleThermally induced conduction type conversion in n-type InPen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=86&issue=4&spage=2361&epage=2363&date=1999&atitle=Thermally+induced+conduction+type+conversion+in+n-type+InPen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.371057en_HK
dc.identifier.scopuseid_2-s2.0-0042995507en_HK
dc.identifier.hkuros47339-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042995507&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume86en_HK
dc.identifier.issue4en_HK
dc.identifier.spage2361en_HK
dc.identifier.epage2363en_HK
dc.identifier.isiWOS:000081720600094-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridZhao, YW=55231669100en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridXu, XL=35188165400en_HK
dc.identifier.scopusauthoridSun, NF=7202556986en_HK
dc.identifier.scopusauthoridSun, TN=7402922751en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK

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