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Article: Gallium implantation induced deep levels in n-type 6H-SIC

TitleGallium implantation induced deep levels in n-type 6H-SIC
Authors
Gong, MFung, SBeling, CDBrauer, GWirth, HSkorupa, W
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 85 n. 1, p. 105-107 How to Cite?
DOI: http://dx.doi.org/10.1063/1.369428
AbstractTwo Ga-acceptor levels, located at EV+0.31eV and EV+0.37eV, respectively, have been observed in the gallium implantation manufactured p+n diodes using deep level transient spectroscopy. The behavior of the implanted gallium is very similar to that of implanted aluminum, except that the positions of the introduced levels are different. This result strongly supports the recent model, which was used to explain the discrepant results between boron and aluminum implantation induced deep levels. Besides the two acceptor levels, a thermally stable electron trap is also observed and has been tentatively attributed to a Ga-related complex. © 1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42185
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000077489200015
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorGong, Men_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorWirth, Hen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2007-01-08T02:31:13Z-
dc.date.available2007-01-08T02:31:13Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 85 n. 1, p. 105-107-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42185-
dc.description.abstractTwo Ga-acceptor levels, located at EV+0.31eV and EV+0.37eV, respectively, have been observed in the gallium implantation manufactured p+n diodes using deep level transient spectroscopy. The behavior of the implanted gallium is very similar to that of implanted aluminum, except that the positions of the introduced levels are different. This result strongly supports the recent model, which was used to explain the discrepant results between boron and aluminum implantation induced deep levels. Besides the two acceptor levels, a thermally stable electron trap is also observed and has been tentatively attributed to a Ga-related complex. © 1999 American Institute of Physics.en_HK
dc.format.extent53926 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1999, v. 85 n. 1, p. 105-107 and may be found at https://doi.org/10.1063/1.369428-
dc.subjectPhysics engineeringen_HK
dc.titleGallium implantation induced deep levels in n-type 6H-SICen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=1&spage=105&epage=107&date=1999&atitle=Gallium+implantation+induced+deep+levels+in+n-type+6H–SICen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.369428en_HK
dc.identifier.scopuseid_2-s2.0-0343549044en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0343549044&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue1en_HK
dc.identifier.spage105en_HK
dc.identifier.epage107en_HK
dc.identifier.isiWOS:000077489200015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridWirth, H=7103085274en_HK
dc.identifier.scopusauthoridSkorupa, W=7102608722en_HK
dc.identifier.issnl0021-8979-

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