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Article: Characterization of Pt-Si interface by spectroscopic ellipsometry

TitleCharacterization of Pt-Si interface by spectroscopic ellipsometry
Authors
KeywordsPhysics engineering
Issue Date1994
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427 How to Cite?
AbstractSpectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42184
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:12Z-
dc.date.available2007-01-08T02:31:12Z-
dc.date.issued1994en_HK
dc.identifier.citationJournal Of Applied Physics, 1994, v. 76 n. 11, p. 7423-7427en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42184-
dc.description.abstractSpectroscopic ellipsometric measurements for Pt/n-Si samples with different thickness of Pt films have been performed. The thickness of the Pt films determined with the three-phase model (air/Pt/Si) changes with the wavelength λ while that with the four-phase model (air/Pt/interface layer/Si) remains unchanged, showing the existence of an interface layer. At the same time, the apparent optical dielectric constants of the interface layer as a function of λ are also obtained. A calculation based on the effective medium theory is carried out to simulate the optical dielectric data of the interface layer. Some structural information of the interface layer is obtained from the calculation. © 1994 American Institute of Physics.en_HK
dc.format.extent582451 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleCharacterization of Pt-Si interface by spectroscopic ellipsometryen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=76&issue=11&spage=7423&epage=7427&date=1994&atitle=Characterization+of+Pt-Si+interface+by+spectroscopic+ellipsometryen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.357968en_HK
dc.identifier.scopuseid_2-s2.0-0343561790en_HK
dc.identifier.hkuros3334-
dc.identifier.volume76en_HK
dc.identifier.issue11en_HK
dc.identifier.spage7423en_HK
dc.identifier.epage7427en_HK
dc.identifier.isiWOS:A1994PU81800037-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, YC=7410214740en_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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