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Article: Inexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors

TitleInexpensive circuit for the measurement of capture cross section of deep level defects in semiconductors
Authors
KeywordsInstruments
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/
Citation
Review Of Scientific Instruments, 1996, v. 67 n. 12, p. 4279-4281 How to Cite?
AbstractA simple and inexpensive circuit to facilitate the direct measurement of capture cross section, when synchronized with a deep level transient spectroscopy system, is described. It avoids the most commonly encountered problem of loading and distortion of the bias (trap filling) pulses of nanosecond duration in the capture cross-section measurement. The capacitance meter, whose internal circuitry is responsible for the distortion, is connected and disconnected from the rest of the apparatus with the help of simple and low-cost reed relay switches featuring high operating speed and low contact resistance. Sharp bias pulses as small as 30 ns can successfully be applied to the sample with no observable distortion. Finally, a representative measurement is shown to demonstrate the simplicity and high performance of the circuit. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42176
ISSN
2015 Impact Factor: 1.336
2015 SCImago Journal Rankings: 0.571
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorReddy, CVen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:03Z-
dc.date.available2007-01-08T02:31:03Z-
dc.date.issued1996en_HK
dc.identifier.citationReview Of Scientific Instruments, 1996, v. 67 n. 12, p. 4279-4281en_HK
dc.identifier.issn0034-6748en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42176-
dc.description.abstractA simple and inexpensive circuit to facilitate the direct measurement of capture cross section, when synchronized with a deep level transient spectroscopy system, is described. It avoids the most commonly encountered problem of loading and distortion of the bias (trap filling) pulses of nanosecond duration in the capture cross-section measurement. The capacitance meter, whose internal circuitry is responsible for the distortion, is connected and disconnected from the rest of the apparatus with the help of simple and low-cost reed relay switches featuring high operating speed and low contact resistance. Sharp bias pulses as small as 30 ns can successfully be applied to the sample with no observable distortion. Finally, a representative measurement is shown to demonstrate the simplicity and high performance of the circuit. © 1996 American Institute of Physics.en_HK
dc.format.extent77552 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://ojps.aip.org/rsio/en_HK
dc.relation.ispartofReview of Scientific Instrumentsen_HK
dc.rightsReview of Scientific Instruments. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectInstrumentsen_HK
dc.titleInexpensive circuit for the measurement of capture cross section of deep level defects in semiconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0034-6748&volume=67&issue=12&spage=4279&epage=4281&date=1996&atitle=Inexpensive+circuit+for+the+measurement+of+capture+cross+section+of+deep+level+defects+in+semiconductorsen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1147579en_HK
dc.identifier.scopuseid_2-s2.0-1542660275en_HK
dc.identifier.hkuros21208-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1542660275&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume67en_HK
dc.identifier.issue12en_HK
dc.identifier.spage4279en_HK
dc.identifier.epage4281en_HK
dc.identifier.isiWOS:A1996WA09100041-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridReddy, CV=8621657000en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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