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Article: Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN

TitleResidual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN
Authors
KeywordsPhysics engineering
Issue Date2001
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2001, v. 90 n. 12, p. 6130-6134 How to Cite?
AbstractIn our recent report, [Xu et al., Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n+ layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n+ conductivity is not only from the contribution of nitride-site oxygen (ON), but also from the gallium-site silicon (SiGa) donors, with activation energies 2 meV (for ON) and 42 meV (for SiGa), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. SiGa and ON should also be shallow donors and VGa-O or VGa-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration NA=1.8×1017 cm-3, the second donor concentration ND2=1.0×1018 cm-3, and the compensation ratio C=NA/ND1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. © 2001 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42174
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, Xen_HK
dc.contributor.authorLiu, Hen_HK
dc.contributor.authorShi, Cen_HK
dc.contributor.authorZhao, Yen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:31:00Z-
dc.date.available2007-01-08T02:31:00Z-
dc.date.issued2001en_HK
dc.identifier.citationJournal Of Applied Physics, 2001, v. 90 n. 12, p. 6130-6134en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42174-
dc.description.abstractIn our recent report, [Xu et al., Appl. Phys. Lett. 76, 152 (2000)], profile distributions of five elements in the GaN/sapphire system have been obtained using secondary ion-mass spectroscopy. The results suggested that a thin degenerate n+ layer at the interface is the main source of the n-type conductivity for the whole film. The further studies in this article show that this n+ conductivity is not only from the contribution of nitride-site oxygen (ON), but also from the gallium-site silicon (SiGa) donors, with activation energies 2 meV (for ON) and 42 meV (for SiGa), respectively. On the other hand, Al incorporated on the Ga sublattice reduces the concentration of compensating Ga-vacancy acceptors. The two-donor two-layer conduction, including Hall carrier concentration and mobility, has been modeled by separating the GaN film into a thin interface layer and a main bulk layer of the GaN film. The bulk layer conductivity is to be found mainly from a near-surface thin layer and is temperature dependent. SiGa and ON should also be shallow donors and VGa-O or VGa-Al should be compensation sites in the bulk layer. The best fits for the Hall mobility and the Hall concentration in the bulk layer were obtained by taking the acceptor concentration NA=1.8×1017 cm-3, the second donor concentration ND2=1.0×1018 cm-3, and the compensation ratio C=NA/ND1=0.6, which is consistent with Rode's theory. Saturation of carriers and the low value of carrier mobility at low temperature can also be well explained. © 2001 American Institute of Physics.en_HK
dc.format.extent68853 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleResidual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaNen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=90&issue=12&spage=6130&epage=6134&date=2001&atitle=Residual+donors+and+compensation+in+metalorganic+chemical+vapor+deposition+as-grown+n-GaNen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1413706en_HK
dc.identifier.scopuseid_2-s2.0-0035894236en_HK
dc.identifier.hkuros109846-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035894236&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue12en_HK
dc.identifier.spage6130en_HK
dc.identifier.epage6134en_HK
dc.identifier.isiWOS:000172489800048-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, X=35188165400en_HK
dc.identifier.scopusauthoridLiu, H=7409757270en_HK
dc.identifier.scopusauthoridShi, C=7402120887en_HK
dc.identifier.scopusauthoridZhao, Y=7406633326en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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