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Article: Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors

TitleDead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors
Authors
KeywordsPhysics engineering
Issue Date2001
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2001, v. 90 n. 10, p. 5351-5356 How to Cite?
AbstractHole-initiated avalanche multiplication is investigated using an AlGaAs/InGaAs p-n-p heterojunction bipolar transistor (HBT). Both experimental measurements and theoretical calculation are used to determine the avalanche multiplication factor. A large departure is observed at low electric field when comparison is made between the measured data and theoretical results obtained from the standard ionization model. The comparison shows that the conventional impact ionization model, based on local electric field, substantially overestimates the hole avalanche multiplication factor Mp - 1 in the AlGaAs/InGaAs p-n-p HBT, where a significant dead space effect occurs in the collector space-charge region. A simple correction model for the dead space is proposed, that allows the multiplication to be accurately predicted, even in a heavily doped structure. Based on this model, multiplication characteristics for different threshold energy of the hole are calculated. A threshold energy of 2.5 eV was determined to be suitable for describing the hole-initiated impact ionization process. © 2001 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42114
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorWang, XQen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-01-08T02:29:16Z-
dc.date.available2007-01-08T02:29:16Z-
dc.date.issued2001en_HK
dc.identifier.citationJournal Of Applied Physics, 2001, v. 90 n. 10, p. 5351-5356en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42114-
dc.description.abstractHole-initiated avalanche multiplication is investigated using an AlGaAs/InGaAs p-n-p heterojunction bipolar transistor (HBT). Both experimental measurements and theoretical calculation are used to determine the avalanche multiplication factor. A large departure is observed at low electric field when comparison is made between the measured data and theoretical results obtained from the standard ionization model. The comparison shows that the conventional impact ionization model, based on local electric field, substantially overestimates the hole avalanche multiplication factor Mp - 1 in the AlGaAs/InGaAs p-n-p HBT, where a significant dead space effect occurs in the collector space-charge region. A simple correction model for the dead space is proposed, that allows the multiplication to be accurately predicted, even in a heavily doped structure. Based on this model, multiplication characteristics for different threshold energy of the hole are calculated. A threshold energy of 2.5 eV was determined to be suitable for describing the hole-initiated impact ionization process. © 2001 American Institute of Physics.en_HK
dc.format.extent107484 bytes-
dc.format.extent2607 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleDead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=90&issue=10&spage=5351&epage=5356&date=2001&atitle=Dead+space+effect+in+space-charge+region+of+collector+of+AlGaAsÕInGaAs+p-n-p+heterojunction+bipolar+transistorsen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1412836en_HK
dc.identifier.scopuseid_2-s2.0-0040926066en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0040926066&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue10en_HK
dc.identifier.spage5351en_HK
dc.identifier.epage5356en_HK
dc.identifier.isiWOS:000171918700074-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridWang, XQ=7501857054en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK

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