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Article: Evidence of swelling of SiO 2 upon thermal annealing

TitleEvidence of swelling of SiO 2 upon thermal annealing
Authors
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2002, v. 80 n. 17, p. 3075-3077 How to Cite?
AbstractUltrathin SiO 2 film was thermally grown on Si(001) substrate by dry oxidation and wet oxidation processes. The films were then subjected to thermal annealing (TA) at 1000°C for 30 min. The structural characterization of the as-grown and the TA samples was carried out using the grazing incidence x-ray reflectivity technique. The analysis of the x-ray reflectivity data was carried out by using a model independent formalism based on the distorted wave Born approximation for obtaining the electron density profile (EDP) of the film as a function of depth. The EDP of both films show a decrease in the electron density as well as an increase in their thickness when the films are subjected to TA. It has also been observed that the total number of electrons is conserved in the oxide film after TA. Our analysis of the x-ray reflectivity data indicates that the SiO 2 film swells and its interface with the substrate modifies upon TA. © 2002 American Institute of Physics. © 2002 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42113
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorBanerjee, Sen_HK
dc.contributor.authorChakraborty, Sen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-01-08T02:29:15Z-
dc.date.available2007-01-08T02:29:15Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics Letters, 2002, v. 80 n. 17, p. 3075-3077en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42113-
dc.description.abstractUltrathin SiO 2 film was thermally grown on Si(001) substrate by dry oxidation and wet oxidation processes. The films were then subjected to thermal annealing (TA) at 1000°C for 30 min. The structural characterization of the as-grown and the TA samples was carried out using the grazing incidence x-ray reflectivity technique. The analysis of the x-ray reflectivity data was carried out by using a model independent formalism based on the distorted wave Born approximation for obtaining the electron density profile (EDP) of the film as a function of depth. The EDP of both films show a decrease in the electron density as well as an increase in their thickness when the films are subjected to TA. It has also been observed that the total number of electrons is conserved in the oxide film after TA. Our analysis of the x-ray reflectivity data indicates that the SiO 2 film swells and its interface with the substrate modifies upon TA. © 2002 American Institute of Physics. © 2002 American Institute of Physics.en_HK
dc.format.extent66838 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleEvidence of swelling of SiO 2 upon thermal annealingen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=80&issue=17&spage=3075&epage=3077&date=2002&atitle=Evidence+of+swelling+of+SiO2+upon+thermal+annealingen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1473863en_HK
dc.identifier.scopuseid_2-s2.0-79955999136en_HK
dc.identifier.hkuros70667-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79955999136&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume80en_HK
dc.identifier.issue17en_HK
dc.identifier.spage3075en_HK
dc.identifier.epage3077en_HK
dc.identifier.isiWOS:000175144300015-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridBanerjee, S=24337534200en_HK
dc.identifier.scopusauthoridChakraborty, S=35577738500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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