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Article: Effects of chemical composition on humidity sensitivity of Al/BaTiO3/Si structure

TitleEffects of chemical composition on humidity sensitivity of Al/BaTiO3/Si structure
Authors
Li, GQLai, PTZeng, SHHuang, MQLiu, BY
KeywordsPhysics engineering
Issue Date1995
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1995, v. 66 n. 18, p. 2436-2438 How to Cite?
DOI: http://dx.doi.org/10.1063/1.113965
AbstractArgon-ion-beam sputtering technique has been applied to deposit barium titanate (BaTiO3) films on silicon wafers at room temperature under vacuum, and then Al/BaTiO3/Si structures were fabricated. Results show that the current and capacitance of these devices are sensitive to the change of relative humidity at room temperature, and saturation absorption (response) time as well as humidity sensitivity of the devices depend on the chemical composition of the BaTiO3 films. For higher annealing temperature and longer annealing time, the oxygen composition increases while fixed charge density decreases. These changes result in lower humidity sensitivity and longer response time.© 1995 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42111
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1995QV24900044

 

DC FieldValueLanguage
dc.contributor.authorLi, GQen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorLiu, BYen_HK
dc.date.accessioned2007-01-08T02:29:12Z-
dc.date.available2007-01-08T02:29:12Z-
dc.date.issued1995en_HK
dc.identifier.citationApplied Physics Letters, 1995, v. 66 n. 18, p. 2436-2438-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42111-
dc.description.abstractArgon-ion-beam sputtering technique has been applied to deposit barium titanate (BaTiO3) films on silicon wafers at room temperature under vacuum, and then Al/BaTiO3/Si structures were fabricated. Results show that the current and capacitance of these devices are sensitive to the change of relative humidity at room temperature, and saturation absorption (response) time as well as humidity sensitivity of the devices depend on the chemical composition of the BaTiO3 films. For higher annealing temperature and longer annealing time, the oxygen composition increases while fixed charge density decreases. These changes result in lower humidity sensitivity and longer response time.© 1995 American Institute of Physics.en_HK
dc.format.extent61346 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1995, v. 66 n. 18, p. 2436-2438 and may be found at https://doi.org/10.1063/1.113965-
dc.subjectPhysics engineeringen_HK
dc.titleEffects of chemical composition on humidity sensitivity of Al/BaTiO3/Si structureen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=66&issue=18&spage=2436&epage=2438&date=1995&atitle=Effects+of+chemical+composition+on+humidity+sensitivity+of+Al/BaTiO3/Si+structureen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.113965en_HK
dc.identifier.scopuseid_2-s2.0-36449007783en_HK
dc.identifier.hkuros5504-
dc.identifier.volume66-
dc.identifier.issue18-
dc.identifier.spage2436en_HK
dc.identifier.epage2438-
dc.identifier.isiWOS:A1995QV24900044-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridZeng, SH=7202412592en_HK
dc.identifier.scopusauthoridHuang, MQ=7404259759en_HK
dc.identifier.scopusauthoridLiu, BY=7408690364en_HK
dc.identifier.issnl0003-6951-

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