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Article: Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system

TitleEffects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 76 n. 25, p. 3744-3746 How to Cite?
AbstractThe effects of N2O nitridation and subsequent annealing in different conditions on thermally oxidized n-type 6H–silicon carbide (SiC) metal–oxide–semiconductor (MOS) interface properties were investigated. Influence of high-field stress on the MOS system was also studied. The nitrided device annealed in dry or wet O2 is found to have lower interface-state density compared to the device annealed in N2 because the reoxidation can reduce nitridation-induced interface damage. Furthermore, significantly less shift of flatband voltage during high-field stress for all nitrided devices indicates much better oxide reliability by replacing strained Si–O bonds with stronger Si–N bonds during nitridation. This is further supported by the fact that annealing of the nitrided device in dry or wet oxygen slightly reduces the robustness of the oxide. In summary, the O2-annealing conditions have to be optimized to deliver a proper tradoff between interface quality and reliability. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42110
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChakraborty, Sen_HK
dc.contributor.authorChan, CLen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:11Z-
dc.date.available2007-01-08T02:29:11Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 76 n. 25, p. 3744-3746en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42110-
dc.description.abstractThe effects of N2O nitridation and subsequent annealing in different conditions on thermally oxidized n-type 6H–silicon carbide (SiC) metal–oxide–semiconductor (MOS) interface properties were investigated. Influence of high-field stress on the MOS system was also studied. The nitrided device annealed in dry or wet O2 is found to have lower interface-state density compared to the device annealed in N2 because the reoxidation can reduce nitridation-induced interface damage. Furthermore, significantly less shift of flatband voltage during high-field stress for all nitrided devices indicates much better oxide reliability by replacing strained Si–O bonds with stronger Si–N bonds during nitridation. This is further supported by the fact that annealing of the nitrided device in dry or wet oxygen slightly reduces the robustness of the oxide. In summary, the O2-annealing conditions have to be optimized to deliver a proper tradoff between interface quality and reliability. © 2000 American Institute of Physics.en_HK
dc.format.extent46738 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Letters-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleEffects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor systemen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=76&issue=25&spage=3744&epage=3746&date=2000&atitle=Effects+of+nitridation+and+annealing+on+interface+properties+of+thermally+oxidized+SiO2/SiC+metal–oxide–semiconductor+systemen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.126769en_HK
dc.identifier.scopuseid_2-s2.0-0000819907-
dc.identifier.hkuros54603-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000819907&selection=ref&src=s&origin=recordpage-
dc.identifier.isiWOS:000087567700025-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridChakraborty, S=35577738500-
dc.identifier.scopusauthoridChan, CL=8507083700-
dc.identifier.scopusauthoridCheng, YC=27167728600-

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