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Article: A study of various oxide/silicon interfaces by Ar + backsurface bombardment

TitleA study of various oxide/silicon interfaces by Ar + backsurface bombardment
Authors
KeywordsPhysics engineering
Issue Date1999
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1999, v. 85 n. 4, p. 2253-2256 How to Cite?
AbstractA low-energy (550 eV) argon beam is used to bombard the backsurfaces of 6 kinds of metal–oxide–semiconductor capacitors, and the resulting effects on their interface characteristics are then investigated. The gate oxide of these capacitors includes thermal oxide, trichloroethyene (TCE) oxide, NH3-nitrided oxide, reoxidized-nitrided oxide, rapid-thermal-nitrided oxide, and N2O-nitrided oxide. Measurements show that for bombardment times up to 45 min the interface-state density of all the devices, in general, decreases with increasing bombardment time/dose, and the midgap energy at the silicon surface tends to rise. Moreover, the bombardment is more effective in reducing acceptor-type than donor-type interface states. On the other hand, the change of fixed-charge density is more complex. For TCE, N2O-nitrided and reoxidized-nitrided oxides, fixed-charge density decreases initially with increasing bombardment time, but then increases, while the trend is reversed for the other gate oxides. A model with stress compensation and weak bond breaking is suggested to explain the results. ©1999 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42107
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, GQen_HK
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-01-08T02:29:08Z-
dc.date.available2007-01-08T02:29:08Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal of Applied Physics, 1999, v. 85 n. 4, p. 2253-2256en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42107-
dc.description.abstractA low-energy (550 eV) argon beam is used to bombard the backsurfaces of 6 kinds of metal–oxide–semiconductor capacitors, and the resulting effects on their interface characteristics are then investigated. The gate oxide of these capacitors includes thermal oxide, trichloroethyene (TCE) oxide, NH3-nitrided oxide, reoxidized-nitrided oxide, rapid-thermal-nitrided oxide, and N2O-nitrided oxide. Measurements show that for bombardment times up to 45 min the interface-state density of all the devices, in general, decreases with increasing bombardment time/dose, and the midgap energy at the silicon surface tends to rise. Moreover, the bombardment is more effective in reducing acceptor-type than donor-type interface states. On the other hand, the change of fixed-charge density is more complex. For TCE, N2O-nitrided and reoxidized-nitrided oxides, fixed-charge density decreases initially with increasing bombardment time, but then increases, while the trend is reversed for the other gate oxides. A model with stress compensation and weak bond breaking is suggested to explain the results. ©1999 American Institute of Physics.en_HK
dc.format.extent75455 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleA study of various oxide/silicon interfaces by Ar + backsurface bombardmenten_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=85&issue=4&spage=2253&epage=2256&date=1999&atitle=A+study+of+various+oxide/silicon+interfaces+by+Ar+++backsurface+bombardmenten_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.369534en_HK
dc.identifier.scopuseid_2-s2.0-0038123794-
dc.identifier.hkuros44787-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0038123794&selection=ref&src=s&origin=recordpage-
dc.identifier.isiWOS:000078403000038-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.scopusauthoridLi, GQ=7407050307-
dc.identifier.scopusauthoridHuang, MQ=7404259759-
dc.identifier.scopusauthoridZeng, SH=7202412592-
dc.identifier.scopusauthoridCheng, YC=27167728600-

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