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Article: Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001)

TitleDensity profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001)
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 85 n. 23, p. 5580-5582 How to Cite?
AbstractThermally grown silicon oxide films on p-typs 6H-silicon carbide substrate under different oxidation and nitridation conditions have been characterized by x-ray reflectivity technique. An electron density profile obtained from the analysis of the x-ray reflectivity data shows that the thickness, density of the oxide film, and structure of the oxide-SiC interface strongly depend on the different growth conditions. In particular, the density of the oxide film for all samples other than that grown in NO is found to be much lower and also not fixed within. It is maximum at the interface and gradually decreases toward the top in all samples except for the sample grown in O2 followed by NO nitridation. For the latter, a very low density at the interface region has been observed. The sample grown in NO shows the best performance in capacitance-voltage characteristic and reliability studies suggesting that the bad performance of the oxide grown on the p-type SiC system as metal-oxide-semiconductor devices, is mainly linked to the low-density oxide film and can be overcome under proper growth condition. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42103
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHazra, Sen_HK
dc.contributor.authorChakraborty, Sen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-01-08T02:29:03Z-
dc.date.available2007-01-08T02:29:03Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 85 n. 23, p. 5580-5582en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42103-
dc.description.abstractThermally grown silicon oxide films on p-typs 6H-silicon carbide substrate under different oxidation and nitridation conditions have been characterized by x-ray reflectivity technique. An electron density profile obtained from the analysis of the x-ray reflectivity data shows that the thickness, density of the oxide film, and structure of the oxide-SiC interface strongly depend on the different growth conditions. In particular, the density of the oxide film for all samples other than that grown in NO is found to be much lower and also not fixed within. It is maximum at the interface and gradually decreases toward the top in all samples except for the sample grown in O2 followed by NO nitridation. For the latter, a very low density at the interface region has been observed. The sample grown in NO shows the best performance in capacitance-voltage characteristic and reliability studies suggesting that the bad performance of the oxide grown on the p-type SiC system as metal-oxide-semiconductor devices, is mainly linked to the low-density oxide film and can be overcome under proper growth condition. © 2004 American Institute of Physics.en_HK
dc.format.extent87640 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleDensity profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001)en_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=85&issue=23&spage=5580&epage=5582&date=2004&atitle=Density+profiles+and+electrical+properties+of+thermally+grown+oxide+nanofilms+on+p-type+6H–SiC(0001)en_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1829385en_HK
dc.identifier.scopuseid_2-s2.0-12844264227en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-12844264227&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue23en_HK
dc.identifier.spage5580en_HK
dc.identifier.epage5582en_HK
dc.identifier.isiWOS:000225620100028-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHazra, S=7005927131en_HK
dc.identifier.scopusauthoridChakraborty, S=35577738500en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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