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Article: Current transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

TitleCurrent transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
Authors
Yan, BPHsu, CCWang, XQYang, ES
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 85 n. 17, p. 3884-3886 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1808891
AbstractWe have developed InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) with low turn-on voltage and high current gain by using a narrow energy bandgap GaAsSb layer as the base and an InGaP layer as the emitter. The current transport mechanism is examined by measuring both of the terminal currents in forward and reverse mode. The results show that the dominant current transport mechanism in the InGaP/GaAsSb/GaAs DHBTs is the transport of carriers across the base layer. This finding suggests that the bandgap offset produced by incorporating Sb composition into GaAs mainly appears on the valence band and the conduction-band offset in InGaP/GaAsSb heterojunction is very small. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42102
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000224798700078
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorWang, XQen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-01-08T02:29:01Z-
dc.date.available2007-01-08T02:29:01Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 85 n. 17, p. 3884-3886-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42102-
dc.description.abstractWe have developed InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) with low turn-on voltage and high current gain by using a narrow energy bandgap GaAsSb layer as the base and an InGaP layer as the emitter. The current transport mechanism is examined by measuring both of the terminal currents in forward and reverse mode. The results show that the dominant current transport mechanism in the InGaP/GaAsSb/GaAs DHBTs is the transport of carriers across the base layer. This finding suggests that the bandgap offset produced by incorporating Sb composition into GaAs mainly appears on the valence band and the conduction-band offset in InGaP/GaAsSb heterojunction is very small. © 2004 American Institute of Physics.en_HK
dc.format.extent70766 bytes-
dc.format.extent2607 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2004, v. 85 n. 17, p. 3884-3886 and may be found at https://doi.org/10.1063/1.1808891-
dc.subjectPhysics engineeringen_HK
dc.titleCurrent transport mechanism in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=85&issue=17&spage=3884&epage=3886&date=2004&atitle=Current+transport+mechanism+in+InGaP/GaAsSb/GaAs+double-heterojunction+bipolar+transistorsen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1808891en_HK
dc.identifier.scopuseid_2-s2.0-9744282642en_HK
dc.identifier.hkuros102394-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-9744282642&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue17en_HK
dc.identifier.spage3884en_HK
dc.identifier.epage3886en_HK
dc.identifier.isiWOS:000224798700078-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridWang, XQ=7501857054en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK
dc.identifier.issnl0003-6951-

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