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Article: Thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors

TitleThermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors
Authors
KeywordsPhysics engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2004, v. 85 n. 19, p. 4505-4507 How to Cite?
AbstractThe thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities > 10 A/cm2, indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs. © 2004 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42101
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYan, BPen_HK
dc.contributor.authorHsu, CCen_HK
dc.contributor.authorWang, XQen_HK
dc.contributor.authorYang, ESen_HK
dc.date.accessioned2007-01-08T02:29:00Z-
dc.date.available2007-01-08T02:29:00Z-
dc.date.issued2004en_HK
dc.identifier.citationApplied Physics Letters, 2004, v. 85 n. 19, p. 4505-4507en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42101-
dc.description.abstractThe thermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistors (DHBTs) is investigated. The experimental results show that the current gain in the InGaP/GaAsSb/GaAs DHBTs is nearly independent of the substrate temperature at collector current densities > 10 A/cm2, indicating that the InGaP/GaAsSb/GaAs DHBTs have excellent thermal stability. This finding suggests that the InGaP/GaAsSb/GaAs DHBTs have larger emitter-base junction valence-band discontinuity than traditional GaAs-based HBTs. © 2004 American Institute of Physics.en_HK
dc.format.extent104926 bytes-
dc.format.extent2607 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleThermal stability of current gain in InGaP/GaAsSb/GaAs double-heterojunction bipolar transistorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=85&issue=19&spage=4505&epage=4507&date=2004&atitle=Thermal+stability+of+current+gain+in+InGaP/GaAsSb/GaAs+double-heterojunction+bipolar+transistorsen_HK
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_HK
dc.identifier.authorityYang, ES=rp00199en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1819505en_HK
dc.identifier.scopuseid_2-s2.0-10844266483en_HK
dc.identifier.hkuros102385-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-10844266483&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue19en_HK
dc.identifier.spage4505en_HK
dc.identifier.epage4507en_HK
dc.identifier.isiWOS:000224962800080-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYan, BP=7201858607en_HK
dc.identifier.scopusauthoridHsu, CC=7404947020en_HK
dc.identifier.scopusauthoridWang, XQ=7501857054en_HK
dc.identifier.scopusauthoridYang, ES=7202021229en_HK

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