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Article: Thermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys

TitleThermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloys
Authors
KeywordsPhysics engineering
Issue Date2001
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2001, v. 79 n. 12, p. 1810-1812 How to Cite?
AbstractTemperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. © 2001 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42037
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorCheng, WCen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorChe, CMen_HK
dc.contributor.authorYang, Hen_HK
dc.date.accessioned2007-01-08T02:27:30Z-
dc.date.available2007-01-08T02:27:30Z-
dc.date.issued2001en_HK
dc.identifier.citationApplied Physics Letters, 2001, v. 79 n. 12, p. 1810-1812en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42037-
dc.description.abstractTemperature-dependent photoluminescence measurements have been carried out in zinc-blende InGaN epilayers grown on GaAs substrates by metalorganic vapor-phase epitaxy. An anomalous temperature dependence of the peak position of the luminescence band was observed. Considering thermal activation and the transfer of excitons localized at different potential minima, we employed a model to explain the observed behavior. A good agreement between the theory and the experiment is achieved. At high temperatures, the model can be approximated to the band-tail-state emission model proposed by Eliseev et al. [Appl. Phys. Lett. 71, 569 (1997)]. © 2001 American Institute of Physics.en_HK
dc.format.extent52072 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.subjectPhysics engineeringen_HK
dc.titleThermal redistribution of localized excitons and its effect on the luminescence band in InGaN ternary alloysen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=79&issue=12&spage=1810&epage=1812&date=2001&atitle=Thermal+redistribution+of+localized+excitons+and+its+effect+on+the+luminescence+band+in+InGaN+ternary+alloysen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1403655en_HK
dc.identifier.scopuseid_2-s2.0-0035903355en_HK
dc.identifier.hkuros65101-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035903355&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume79en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1810en_HK
dc.identifier.epage1812en_HK
dc.identifier.isiWOS:000171014800023-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridCheng, WC=7402169417en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.scopusauthoridYang, H=35294590100en_HK

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