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Article: Time-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition

TitleTime-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor deposition
Authors
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 76 n. 18, p. 2550-2552 How to Cite?
AbstractSiC nanocrystalline films on Si substrates deposited using advanced electron-cyclotron-resonance chemical-vapor deposition exhibit intense visible light emission at room temperature under laser excitation. Continuous-wave and time-resolved photoluminescence measurements for these SiC films were carried out at room temperature. The photon energy of the dominant emission peaks is higher than the band gap of cubic SiC. Room-temperature optical absorption measurements show a clear blueshift of the band gap of the samples with a decrease of the average size of the nanoclusters, indicating an expected quantum-confinement effect. However, the emission spectra are basically independent of the size. Temporal evolution of the dominant emissions exhibits double-exponential decay processes. Two distinct decay times of ∼200 ps and ∼1 ns were identified, which are at least two orders of magnitude faster than that of the bound-exciton transitions in bulk 3C-SiC at low temperature. Strong light emissions and short decay times strongly suggest that the radiative recombinations may be from some direct transitions such as self-trapped excitons on the surface of the nanoclusters. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42032
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorXu, SJen_HK
dc.contributor.authorYu, MBen_HK
dc.contributor.authorRuslien_HK
dc.contributor.authorYoon, SFen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2007-01-08T02:27:24Z-
dc.date.available2007-01-08T02:27:24Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 76 n. 18, p. 2550-2552en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42032-
dc.description.abstractSiC nanocrystalline films on Si substrates deposited using advanced electron-cyclotron-resonance chemical-vapor deposition exhibit intense visible light emission at room temperature under laser excitation. Continuous-wave and time-resolved photoluminescence measurements for these SiC films were carried out at room temperature. The photon energy of the dominant emission peaks is higher than the band gap of cubic SiC. Room-temperature optical absorption measurements show a clear blueshift of the band gap of the samples with a decrease of the average size of the nanoclusters, indicating an expected quantum-confinement effect. However, the emission spectra are basically independent of the size. Temporal evolution of the dominant emissions exhibits double-exponential decay processes. Two distinct decay times of ∼200 ps and ∼1 ns were identified, which are at least two orders of magnitude faster than that of the bound-exciton transitions in bulk 3C-SiC at low temperature. Strong light emissions and short decay times strongly suggest that the radiative recombinations may be from some direct transitions such as self-trapped excitons on the surface of the nanoclusters. © 2000 American Institute of Physics.en_HK
dc.format.extent81150 bytes-
dc.format.extent28672 bytes-
dc.format.extent877894 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics engineeringen_HK
dc.titleTime-resolved photoluminescence spectra of strong visible light-emitting SiC nanocrystalline films on Si deposited by electron-cyclotron-resonance chemical-vapor depositionen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=76&issue=18&spage=2550&epage=2552&date=2000&atitle=Time-resolved+photoluminescence+spectra+of+strong+visible+light-emitting+SiC+nanocrystalline+films+on+Si+deposited+by+electron-cyclotron-resonance+chemical-vapor+depositionen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.126382en_HK
dc.identifier.scopuseid_2-s2.0-0001705167en_HK
dc.identifier.hkuros55915-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001705167&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume76en_HK
dc.identifier.issue18en_HK
dc.identifier.spage2550en_HK
dc.identifier.epage2552en_HK
dc.identifier.isiWOS:000086662900022-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridYu, MB=8088400600en_HK
dc.identifier.scopusauthoridRusli=7409925063en_HK
dc.identifier.scopusauthoridYoon, SF=35563567700en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK

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