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postgraduate thesis: Construction of a positron-lifetime spectrometer and its application to studying electron irradiation induced defects in 6H siliconcarbide

TitleConstruction of a positron-lifetime spectrometer and its application to studying electron irradiation induced defects in 6H siliconcarbide
Authors
Lam, Tat-wang.林達宏.
Advisors
Advisor(s):Ling, FCC
Issue Date2003
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Lam, T. [林達宏]. (2003). Construction of a positron-lifetime spectrometer and its application to studying electron irradiation induced defects in 6H silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3154991
DegreeMaster of Philosophy
SubjectSilicon carbide - Spectra.
Semiconductors - Defects.
Positron annihilation.
Spectrometer.
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/40139
HKU Library Item IDb3154991

 

DC FieldValueLanguage
dc.contributor.advisorLing, FCC-
dc.contributor.authorLam, Tat-wang.-
dc.contributor.author林達宏.-
dc.date.issued2003-
dc.identifier.citationLam, T. [林達宏]. (2003). Construction of a positron-lifetime spectrometer and its application to studying electron irradiation induced defects in 6H silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3154991-
dc.identifier.urihttp://hdl.handle.net/10722/40139-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B31549913-
dc.subject.lcshSilicon carbide - Spectra.-
dc.subject.lcshSemiconductors - Defects.-
dc.subject.lcshPositron annihilation.-
dc.subject.lcshSpectrometer.-
dc.titleConstruction of a positron-lifetime spectrometer and its application to studying electron irradiation induced defects in 6H siliconcarbide-
dc.typePG_Thesis-
dc.identifier.hkulb3154991-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.identifier.doi10.5353/th_b3154991-
dc.date.hkucongregation2005-
dc.identifier.mmsid991013305619703414-

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