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postgraduate thesis: Electronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells

TitleElectronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells
Authors
Issue Date2004
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Huang, Y.. (2004). Electronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3147982
DegreeMaster of Philosophy
SubjectGallium arsenide.
Compound semiconductors.
Quantum wells.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.authorHuang, Ying-
dc.date.issued2004-
dc.identifier.citationHuang, Y.. (2004). Electronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3147982-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31479820-
dc.subject.lcshGallium arsenide.-
dc.subject.lcshCompound semiconductors.-
dc.subject.lcshQuantum wells.-
dc.titleElectronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells-
dc.typePG_Thesis-
dc.identifier.hkulb3147982-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.identifier.doi10.5353/th_b3147982-
dc.date.hkucongregation2005-

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