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postgraduate thesis: The two gallium vacancy-related defects in undoped gallium antimonide
| Title | The two gallium vacancy-related defects in undoped gallium antimonide |
|---|---|
| Authors | |
| Advisors | Advisor(s):Ling, FCC |
| Issue Date | 2004 |
| Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
| Citation | Ma, S. M. [馬信傑]. (2004). The two gallium vacancy-related defects in undoped gallium antimonide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3131965 |
| Degree | Master of Philosophy |
| Subject | Gallium arsenide semiconductors - Defects. Positron annihilation. Spectrum analysis. Annealing of crystals. |
| Dept/Program | Physics |
| Persistent Identifier | http://hdl.handle.net/10722/39895 |
| HKU Library Item ID | b3131965 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Ling, FCC | - |
| dc.contributor.author | Ma, Shun-kit, Martin. | - |
| dc.contributor.author | 馬信傑. | - |
| dc.date.issued | 2004 | - |
| dc.identifier.citation | Ma, S. M. [馬信傑]. (2004). The two gallium vacancy-related defects in undoped gallium antimonide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3131965 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/39895 | - |
| dc.language | eng | - |
| dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
| dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
| dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
| dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
| dc.source.uri | http://hub.hku.hk/bib/B31319658 | - |
| dc.subject.lcsh | Gallium arsenide semiconductors - Defects. | - |
| dc.subject.lcsh | Positron annihilation. | - |
| dc.subject.lcsh | Spectrum analysis. | - |
| dc.subject.lcsh | Annealing of crystals. | - |
| dc.title | The two gallium vacancy-related defects in undoped gallium antimonide | - |
| dc.type | PG_Thesis | - |
| dc.identifier.hkul | b3131965 | - |
| dc.description.thesisname | Master of Philosophy | - |
| dc.description.thesislevel | Master | - |
| dc.description.thesisdiscipline | Physics | - |
| dc.description.nature | published_or_final_version | - |
| dc.description.nature | abstract | - |
| dc.description.nature | toc | - |
| dc.identifier.doi | 10.5353/th_b3131965 | - |
| dc.date.hkucongregation | 2005 | - |
| dc.identifier.mmsid | 991012717029703414 | - |