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postgraduate thesis: The two gallium vacancy-related defects in undoped gallium antimonide

TitleThe two gallium vacancy-related defects in undoped gallium antimonide
Authors
Advisors
Advisor(s):Ling, FCC
Issue Date2004
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Ma, S. M. [馬信傑]. (2004). The two gallium vacancy-related defects in undoped gallium antimonide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3131965
DegreeMaster of Philosophy
SubjectGallium arsenide semiconductors - Defects.
Positron annihilation.
Spectrum analysis.
Annealing of crystals.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorLing, FCC-
dc.contributor.authorMa, Shun-kit, Martin.-
dc.contributor.author馬信傑.-
dc.date.issued2004-
dc.identifier.citationMa, S. M. [馬信傑]. (2004). The two gallium vacancy-related defects in undoped gallium antimonide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3131965-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31319658-
dc.subject.lcshGallium arsenide semiconductors - Defects.-
dc.subject.lcshPositron annihilation.-
dc.subject.lcshSpectrum analysis.-
dc.subject.lcshAnnealing of crystals.-
dc.titleThe two gallium vacancy-related defects in undoped gallium antimonide-
dc.typePG_Thesis-
dc.identifier.hkulb3131965-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.description.naturetoc-
dc.identifier.doi10.5353/th_b3131965-
dc.date.hkucongregation2005-

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