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postgraduate thesis: Positron re-emission from silicon carbide surfaces

TitlePositron re-emission from silicon carbide surfaces
Authors
Advisors
Issue Date2002
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Hui, I. P. [許貽培]. (2002). Positron re-emission from silicon carbide surfaces. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122738
DegreeMaster of Philosophy
SubjectPositrons.
Silicon carbide - Surfaces.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorFung, SHY-
dc.contributor.advisorBeling, CD-
dc.contributor.authorHui, I Pui.-
dc.contributor.author許貽培.-
dc.date.issued2002-
dc.identifier.citationHui, I. P. [許貽培]. (2002). Positron re-emission from silicon carbide surfaces. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122738-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31227387-
dc.subject.lcshPositrons.-
dc.subject.lcshSilicon carbide - Surfaces.-
dc.titlePositron re-emission from silicon carbide surfaces-
dc.typePG_Thesis-
dc.identifier.hkulb3122738-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122738-
dc.date.hkucongregation2003-

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