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postgraduate thesis: Spectroscopic investigation of optical properties of GaN epilayers andInGaN/GaN quantum wells
Title | Spectroscopic investigation of optical properties of GaN epilayers andInGaN/GaN quantum wells |
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Authors | |
Advisors | |
Issue Date | 2002 |
Publisher | The University of Hong Kong (Pokfulam, Hong Kong) |
Citation | Wang, H. [王泓江]. (2002). Spectroscopic investigation of optical properties of GaN epilayers and InGaN/GaN quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2977991 |
Degree | Master of Philosophy |
Subject | Gallium nitride. Quantum wells. Semiconductors - Optical properties. Photoluminescence. |
Dept/Program | Physics |
Persistent Identifier | http://hdl.handle.net/10722/39153 |
HKU Library Item ID | b2977991 |
DC Field | Value | Language |
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dc.contributor.advisor | Xie, MH | - |
dc.contributor.advisor | Xu, S | - |
dc.contributor.author | Wang, Hongjiang | - |
dc.contributor.author | 王泓江 | - |
dc.date.issued | 2002 | - |
dc.identifier.citation | Wang, H. [王泓江]. (2002). Spectroscopic investigation of optical properties of GaN epilayers and InGaN/GaN quantum wells. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2977991 | - |
dc.identifier.uri | http://hdl.handle.net/10722/39153 | - |
dc.language | eng | - |
dc.publisher | The University of Hong Kong (Pokfulam, Hong Kong) | - |
dc.relation.ispartof | HKU Theses Online (HKUTO) | - |
dc.rights | The author retains all proprietary rights, (such as patent rights) and the right to use in future works. | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.source.uri | http://hub.hku.hk/bib/B29779911 | - |
dc.subject.lcsh | Gallium nitride. | - |
dc.subject.lcsh | Quantum wells. | - |
dc.subject.lcsh | Semiconductors - Optical properties. | - |
dc.subject.lcsh | Photoluminescence. | - |
dc.title | Spectroscopic investigation of optical properties of GaN epilayers andInGaN/GaN quantum wells | - |
dc.type | PG_Thesis | - |
dc.identifier.hkul | b2977991 | - |
dc.description.thesisname | Master of Philosophy | - |
dc.description.thesislevel | Master | - |
dc.description.thesisdiscipline | Physics | - |
dc.description.nature | published_or_final_version | - |
dc.description.nature | abstract | - |
dc.description.nature | toc | - |
dc.identifier.doi | 10.5353/th_b2977991 | - |
dc.date.hkucongregation | 2004 | - |
dc.identifier.mmsid | 991009540599703414 | - |