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postgraduate thesis: A study of geometrical properties of SiC and GaN surfaces by auger electron spectroscopy

TitleA study of geometrical properties of SiC and GaN surfaces by auger electron spectroscopy
Authors
Issue Date2002
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Chan, K. [陳勁龍]. (2002). A study of geometrical properties of SiC and GaN surfaces by auger electron spectroscopy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2664387
DegreeMaster of Philosophy
SubjectSilicon carbide.
Gallium nitride.
Semiconductors.
Auger effect.
Electron spectroscopy.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.authorChan, King-lung.-
dc.contributor.author陳勁龍.-
dc.date.issued2002-
dc.identifier.citationChan, K. [陳勁龍]. (2002). A study of geometrical properties of SiC and GaN surfaces by auger electron spectroscopy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2664387-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B2664387X-
dc.subject.lcshSilicon carbide.-
dc.subject.lcshGallium nitride.-
dc.subject.lcshSemiconductors.-
dc.subject.lcshAuger effect.-
dc.subject.lcshElectron spectroscopy.-
dc.titleA study of geometrical properties of SiC and GaN surfaces by auger electron spectroscopy-
dc.typePG_Thesis-
dc.identifier.hkulb2664387-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.description.naturetoc-
dc.identifier.doi10.5353/th_b2664387-
dc.date.hkucongregation2003-

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