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postgraduate thesis: Growth kinetics of GaN during molecular beam epitaxy

TitleGrowth kinetics of GaN during molecular beam epitaxy
Authors
Issue Date2001
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Zheng, L. [鄭聯喜]. (2001). Growth kinetics of GaN during molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124274
DegreeDoctor of Philosophy
SubjectGallium nitride.
Molecular beam epitaxy.
Scanning tunneling microscopy.
Surfaces (Physics)
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.authorZheng, Lianxi.-
dc.contributor.author鄭聯喜-
dc.date.issued2001-
dc.identifier.citationZheng, L. [鄭聯喜]. (2001). Growth kinetics of GaN during molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124274-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31242741-
dc.subject.lcshGallium nitride.-
dc.subject.lcshMolecular beam epitaxy.-
dc.subject.lcshScanning tunneling microscopy.-
dc.subject.lcshSurfaces (Physics)-
dc.titleGrowth kinetics of GaN during molecular beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb3124274-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3124274-
dc.date.hkucongregation2001-

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