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postgraduate thesis: Growing of GaN on vicinal SiC surface by molecular beam epitaxy

TitleGrowing of GaN on vicinal SiC surface by molecular beam epitaxy
Authors
Issue Date2002
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Cheung, S. [張秀霞]. (2002). Growing of GaN on vicinal SiC surface by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124300
DegreeDoctor of Philosophy
SubjectSilicon carbide.
Gallium nitride.
Molecular beam epitaxy
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.authorCheung, Sau-ha.-
dc.contributor.author張秀霞-
dc.date.issued2002-
dc.identifier.citationCheung, S. [張秀霞]. (2002). Growing of GaN on vicinal SiC surface by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124300-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31243009-
dc.subject.lcshSilicon carbide.-
dc.subject.lcshGallium nitride.-
dc.subject.lcshMolecular beam epitaxy-
dc.titleGrowing of GaN on vicinal SiC surface by molecular beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb3124300-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3124300-
dc.date.hkucongregation2002-

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