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postgraduate thesis: Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy

TitleSome defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy
Authors
Advisors
Issue Date2000
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Deng, A. [鄧愛紅]. (2000). Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124012
DegreeDoctor of Philosophy
SubjectSemiconductors - Spectra.
Positron annihilation.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorFung, SHY-
dc.contributor.advisorBeling, CD-
dc.contributor.authorDeng, Aihong.-
dc.contributor.author鄧愛紅.-
dc.date.issued2000-
dc.identifier.citationDeng, A. [鄧愛紅]. (2000). Some defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3124012-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31240124-
dc.subject.lcshSemiconductors - Spectra.-
dc.subject.lcshPositron annihilation.-
dc.titleSome defect studies on the compound semiconductors GaAs, InP and SiC using positron annihilation spectroscopy-
dc.typePG_Thesis-
dc.identifier.hkulb3124012-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3124012-
dc.date.hkucongregation2000-

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