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postgraduate thesis: A study of gate-oxide leakage in MOS devices

TitleA study of gate-oxide leakage in MOS devices
Authors
Issue Date1993
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Fleischer, S.. (1993). A study of gate-oxide leakage in MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123355
DegreeDoctor of Philosophy
SubjectGas leakage.
Metal semiconductor field-effect transistors.
Dept/ProgramElectrical and Electronic Engineering
Persistent Identifierhttp://hdl.handle.net/10722/35212
HKU Library Item IDb3123355

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Stephen.-
dc.date.issued1993-
dc.identifier.citationFleischer, S.. (1993). A study of gate-oxide leakage in MOS devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123355-
dc.identifier.urihttp://hdl.handle.net/10722/35212-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B31233557-
dc.subject.lcshGas leakage.-
dc.subject.lcshMetal semiconductor field-effect transistors.-
dc.titleA study of gate-oxide leakage in MOS devices-
dc.typePG_Thesis-
dc.identifier.hkulb3123355-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplineElectrical and Electronic Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3123355-
dc.date.hkucongregation1994-
dc.identifier.mmsid991012366219703414-

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