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postgraduate thesis: Modeling of narrow-width effect in MOSFET

TitleModeling of narrow-width effect in MOSFET
Authors
Lai, Pui-to.黎沛濤
Issue Date1984
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Lai, P. [黎沛濤]. (1984). Modeling of narrow-width effect in MOSFET. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123049
DegreeDoctor of Philosophy
SubjectMetal oxide semiconductor field-effect transistors.
Dept/ProgramElectrical Engineering
Persistent Identifierhttp://hdl.handle.net/10722/35182
HKU Library Item IDb3123049

 

DC FieldValueLanguage
dc.contributor.authorLai, Pui-to.-
dc.contributor.author黎沛濤-
dc.date.issued1984-
dc.identifier.citationLai, P. [黎沛濤]. (1984). Modeling of narrow-width effect in MOSFET. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123049-
dc.identifier.urihttp://hdl.handle.net/10722/35182-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B31230490-
dc.subject.lcshMetal oxide semiconductor field-effect transistors.-
dc.titleModeling of narrow-width effect in MOSFET-
dc.typePG_Thesis-
dc.identifier.hkulb3123049-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplineElectrical Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3123049-
dc.date.hkucongregation1985-
dc.identifier.mmsid991012339949703414-

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