File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

postgraduate thesis: Deep level transient spectroscopy studies of gallium arsenide and silicon carbide

TitleDeep level transient spectroscopy studies of gallium arsenide and silicon carbide
Authors
Issue Date1997
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Chavva, V. R.. (1997). Deep level transient spectroscopy studies of gallium arsenide and silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123559
DegreeDoctor of Philosophy
SubjectGallium arsenide.
Silicon carbide.
Spectrum analysis.
Rapid thermal processing.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.authorChavva, Venkataramana Reddy.-
dc.date.issued1997-
dc.identifier.citationChavva, V. R.. (1997). Deep level transient spectroscopy studies of gallium arsenide and silicon carbide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123559-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31235591-
dc.subject.lcshGallium arsenide.-
dc.subject.lcshSilicon carbide.-
dc.subject.lcshSpectrum analysis.-
dc.subject.lcshRapid thermal processing.-
dc.titleDeep level transient spectroscopy studies of gallium arsenide and silicon carbide-
dc.typePG_Thesis-
dc.identifier.hkulb3123559-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3123559-
dc.date.hkucongregation1997-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats