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postgraduate thesis: Electrical characterization of Si-SiO2 interface for thin oxides

TitleElectrical characterization of Si-SiO2 interface for thin oxides
Authors
Issue Date1987
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Hung, K. [洪國光]. (1987). Electrical characterization of Si-SiO2 interface for thin oxides. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123086
DegreeDoctor of Philosophy
SubjectSilicon - Electric properties.
Silicon oxide films.
Dept/ProgramElectrical and Electronic Engineering

 

DC FieldValueLanguage
dc.contributor.authorHung, Kwok-kwong.-
dc.contributor.author洪國光-
dc.date.issued1987-
dc.identifier.citationHung, K. [洪國光]. (1987). Electrical characterization of Si-SiO2 interface for thin oxides. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123086-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31230866-
dc.subject.lcshSilicon - Electric properties.-
dc.subject.lcshSilicon oxide films.-
dc.titleElectrical characterization of Si-SiO2 interface for thin oxides-
dc.typePG_Thesis-
dc.identifier.hkulb3123086-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplineElectrical and Electronic Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3123086-
dc.date.hkucongregation1987-

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