Postgraduate Thesis: Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics

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TitleElectrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics
AuthorsZeng, Xu
曾旭
Issue Date1996
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
DegreeDoctor of Philosophy
SubjectDielectrics.
Metal oxide semiconductors.
Nitrous oxide.
Dept/ProgramElectrical and Electronic Engineering
DOIhttp://dx.doi.org/10.5353/th_b3123547
DC Field
Value
dc.contributor.authorZeng, Xu
dc.contributor.author曾旭
dc.date.hkucongregation1996
dc.date.issued1996
dc.description.naturepublished_or_final_version
dc.description.thesisdisciplineElectrical and Electronic Engineering
dc.description.thesisleveldoctoral
dc.description.thesisnameDoctor of Philosophy
dc.identifier.doihttp://dx.doi.org/10.5353/th_b3123547
dc.identifier.hkulb3123547
dc.languageeng
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
dc.relation.ispartofHKU Theses Online (HKUTO)
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
dc.source.urihttp://hub.hku.hk/bib/B31235475
dc.subject.lcshDielectrics.
dc.subject.lcshMetal oxide semiconductors.
dc.subject.lcshNitrous oxide.
dc.titleElectrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics
dc.typePG_Thesis