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Postgraduate Thesis: Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics
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TitleElectrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics
 
AuthorsZeng, Xu
曾旭
 
Issue Date1996
 
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
DegreeDoctor of Philosophy
 
SubjectDielectrics.
Metal oxide semiconductors.
Nitrous oxide.
 
Dept/ProgramElectrical and Electronic Engineering
 
DOIhttp://dx.doi.org/10.5353/th_b3123547
 
DC FieldValue
dc.contributor.authorZeng, Xu
 
dc.contributor.author曾旭
 
dc.date.hkucongregation1996
 
dc.date.issued1996
 
dc.description.naturepublished_or_final_version
 
dc.description.thesisdisciplineElectrical and Electronic Engineering
 
dc.description.thesisleveldoctoral
 
dc.description.thesisnameDoctor of Philosophy
 
dc.identifier.doihttp://dx.doi.org/10.5353/th_b3123547
 
dc.identifier.hkulb3123547
 
dc.languageeng
 
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
dc.relation.ispartofHKU Theses Online (HKUTO)
 
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.source.urihttp://hub.hku.hk/bib/B31235475
 
dc.subject.lcshDielectrics.
 
dc.subject.lcshMetal oxide semiconductors.
 
dc.subject.lcshNitrous oxide.
 
dc.titleElectrical reliability of N-Mos devices with N2O-based oxides as gate dielectrics
 
dc.typePG_Thesis
 
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