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postgraduate thesis: Hot-carrier-induced instabilities in n-mosfet's with thermally nitrided oxide as gate dielectric

TitleHot-carrier-induced instabilities in n-mosfet's with thermally nitrided oxide as gate dielectric
Authors
Issue Date1992
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Ma, Z. [馬志堅]. (1992). Hot-carrier-induced instabilities in n-mosfet's with thermally nitrided oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123273
DegreeDoctor of Philosophy
SubjectMetal oxide semiconductor field-effect transistors.
Hot carriers.
Nitric oxide.
Dept/ProgramElectrical and Electronic Engineering

 

DC FieldValueLanguage
dc.contributor.authorMa, Zhi-jian.-
dc.contributor.author馬志堅-
dc.date.issued1992-
dc.identifier.citationMa, Z. [馬志堅]. (1992). Hot-carrier-induced instabilities in n-mosfet's with thermally nitrided oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3123273-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31232735-
dc.subject.lcshMetal oxide semiconductor field-effect transistors.-
dc.subject.lcshHot carriers.-
dc.subject.lcshNitric oxide.-
dc.titleHot-carrier-induced instabilities in n-mosfet's with thermally nitrided oxide as gate dielectric-
dc.typePG_Thesis-
dc.identifier.hkulb3123273-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplineElectrical and Electronic Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3123273-
dc.date.hkucongregation1992-

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