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postgraduate thesis: Interface state generation induced by Fowler-Nordheim tunneling in mosdevices

TitleInterface state generation induced by Fowler-Nordheim tunneling in mosdevices
Authors
Advisors
Issue Date1999
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Li, S. [李加碧]. (1999). Interface state generation induced by Fowler-Nordheim tunneling in mos devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122140
DegreeMaster of Philosophy
SubjectMetal oxide semiconductors.
Tunneling (Physics)
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/34211
HKU Library Item IDb3122140

 

DC FieldValueLanguage
dc.contributor.advisorBeling, CD-
dc.contributor.advisorFung, SHY-
dc.contributor.authorLi, Stella.-
dc.contributor.author李加碧-
dc.date.issued1999-
dc.identifier.citationLi, S. [李加碧]. (1999). Interface state generation induced by Fowler-Nordheim tunneling in mos devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122140-
dc.identifier.urihttp://hdl.handle.net/10722/34211-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B31221403-
dc.subject.lcshMetal oxide semiconductors.-
dc.subject.lcshTunneling (Physics)-
dc.titleInterface state generation induced by Fowler-Nordheim tunneling in mosdevices-
dc.typePG_Thesis-
dc.identifier.hkulb3122140-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122140-
dc.date.hkucongregation1999-
dc.identifier.mmsid991012261279703414-

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