File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

postgraduate thesis: Interface state generation induced by Fowler-Nordheim tunneling in mosdevices

TitleInterface state generation induced by Fowler-Nordheim tunneling in mosdevices
Authors
Advisors
Issue Date1999
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Li, S. [李加碧]. (1999). Interface state generation induced by Fowler-Nordheim tunneling in mos devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122140
DegreeMaster of Philosophy
SubjectMetal oxide semiconductors.
Tunneling (Physics)
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorBeling, CD-
dc.contributor.advisorFung, SHY-
dc.contributor.authorLi, Stella.-
dc.contributor.author李加碧-
dc.date.issued1999-
dc.identifier.citationLi, S. [李加碧]. (1999). Interface state generation induced by Fowler-Nordheim tunneling in mos devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122140-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31221403-
dc.subject.lcshMetal oxide semiconductors.-
dc.subject.lcshTunneling (Physics)-
dc.titleInterface state generation induced by Fowler-Nordheim tunneling in mosdevices-
dc.typePG_Thesis-
dc.identifier.hkulb3122140-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122140-
dc.date.hkucongregation1999-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats