File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

postgraduate thesis: Studies of Ga vacancy related defects in GaSb

TitleStudies of Ga vacancy related defects in GaSb
Authors
Advisors
Issue Date2002
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Mui, W. [梅詠琪]. (2002). Studies of Ga vacancy related defects in GaSb. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122654
DegreeMaster of Philosophy
SubjectGallium compound.
Semiconductors - Defects.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorLing, FCC-
dc.contributor.advisorBeling, CD-
dc.contributor.authorMui, Wing-ki.-
dc.contributor.author梅詠琪.-
dc.date.issued2002-
dc.identifier.citationMui, W. [梅詠琪]. (2002). Studies of Ga vacancy related defects in GaSb. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122654-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31226541-
dc.subject.lcshGallium compound.-
dc.subject.lcshSemiconductors - Defects.-
dc.titleStudies of Ga vacancy related defects in GaSb-
dc.typePG_Thesis-
dc.identifier.hkulb3122654-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122654-
dc.date.hkucongregation2002-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats