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postgraduate thesis: Positron lifetime and mobility studies of SiC

TitlePositron lifetime and mobility studies of SiC
Authors
Advisors
Issue Date1998
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Cheung, S. [張秀霞]. (1998). Positron lifetime and mobility studies of SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122059
DegreeMaster of Philosophy
SubjectSilicon carbide.
Positron annihilation.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorFung, SHY-
dc.contributor.advisorBeling, CD-
dc.contributor.authorCheung, Sau-ha.-
dc.contributor.author張秀霞-
dc.date.issued1998-
dc.identifier.citationCheung, S. [張秀霞]. (1998). Positron lifetime and mobility studies of SiC. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122059-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31220599-
dc.subject.lcshSilicon carbide.-
dc.subject.lcshPositron annihilation.-
dc.titlePositron lifetime and mobility studies of SiC-
dc.typePG_Thesis-
dc.identifier.hkulb3122059-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122059-
dc.date.hkucongregation1998-

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