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Article: Identifying and Exploring Synthetic Antiferromagnetic Skyrmions

TitleIdentifying and Exploring Synthetic Antiferromagnetic Skyrmions
Authors
Keywordsdomain walls
interlayer exchange coupling
skyrmion Hall effect
spintronics
synthetic antiferromagnetic skyrmion
Issue Date1-Aug-2023
PublisherWiley
Citation
Advanced Functional Materials, 2023, v. 33, n. 49 How to Cite?
Abstract

Synthetic antiferromagnetic (SAF) skyrmions are emerging as novel information carriers due to their high mobility and lack of a skyrmion Hall effect. However, distinguishing SAF skyrmions from their ferromagnetic counterparts using imaging techniques like magneto-optical microscopy remains challenging. While the suppressed intrinsic skyrmion Hall effect (SkHE) has been commonly used to identify SAF skyrmions, it is important to note that other factors such as defect pinning and dipolar interaction can also lead to a suppressed SkHE. Therefore, there is an urgent need for a universal identification method that can reliably differentiate SAF skyrmions from ferromagnetic ones. In this study, the generation of a SAF skyrmion within a standard SAF stack is demonstrated and its motion with almost no SkHE is investigated. Furthermore, a universal identification method is proposed wherein the application of an out-of-plane field allows the SAF skyrmion to be decoupled into two domains, which can either expand or contract with the application of an electric current. By expediting the development of a reliable means of identifying SAF skyrmions, these findings will accelerate the realization of practical applications based on these unique information carriers.


Persistent Identifierhttp://hdl.handle.net/10722/339333
ISSN
2021 Impact Factor: 19.924
2020 SCImago Journal Rankings: 6.069

 

DC FieldValueLanguage
dc.contributor.authorZhao, Y-
dc.contributor.authorYang, S-
dc.contributor.authorWu, K-
dc.contributor.authorLi, S-
dc.contributor.authorGao, Y-
dc.contributor.authorHao, H-
dc.contributor.authorZhang, X-
dc.contributor.authorWang, S-
dc.contributor.authorLiu, Q-
dc.contributor.authorZhang, S-
dc.contributor.authorChu, Z-
dc.contributor.authorÅkerman, J-
dc.contributor.authorZhou, Y -
dc.date.accessioned2024-03-11T10:35:46Z-
dc.date.available2024-03-11T10:35:46Z-
dc.date.issued2023-08-01-
dc.identifier.citationAdvanced Functional Materials, 2023, v. 33, n. 49-
dc.identifier.issn1616-301X-
dc.identifier.urihttp://hdl.handle.net/10722/339333-
dc.description.abstract<p>Synthetic antiferromagnetic (SAF) skyrmions are emerging as novel information carriers due to their high mobility and lack of a skyrmion Hall effect. However, distinguishing SAF skyrmions from their ferromagnetic counterparts using imaging techniques like magneto-optical microscopy remains challenging. While the suppressed intrinsic skyrmion Hall effect (SkHE) has been commonly used to identify SAF skyrmions, it is important to note that other factors such as defect pinning and dipolar interaction can also lead to a suppressed SkHE. Therefore, there is an urgent need for a universal identification method that can reliably differentiate SAF skyrmions from ferromagnetic ones. In this study, the generation of a SAF skyrmion within a standard SAF stack is demonstrated and its motion with almost no SkHE is investigated. Furthermore, a universal identification method is proposed wherein the application of an out-of-plane field allows the SAF skyrmion to be decoupled into two domains, which can either expand or contract with the application of an electric current. By expediting the development of a reliable means of identifying SAF skyrmions, these findings will accelerate the realization of practical applications based on these unique information carriers.</p>-
dc.languageeng-
dc.publisherWiley-
dc.relation.ispartofAdvanced Functional Materials-
dc.subjectdomain walls-
dc.subjectinterlayer exchange coupling-
dc.subjectskyrmion Hall effect-
dc.subjectspintronics-
dc.subjectsynthetic antiferromagnetic skyrmion-
dc.titleIdentifying and Exploring Synthetic Antiferromagnetic Skyrmions-
dc.typeArticle-
dc.identifier.doi10.1002/adfm.202303133-
dc.identifier.scopuseid_2-s2.0-85166207441-
dc.identifier.volume33-
dc.identifier.issue49-
dc.identifier.eissn1616-3028-
dc.identifier.issnl1616-301X-

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