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postgraduate thesis: Electric field distribution in metal/semi-insulating GaAs contacts investigated by positron lifetime technique

TitleElectric field distribution in metal/semi-insulating GaAs contacts investigated by positron lifetime technique
Authors
Advisors
Issue Date1999
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Shek, Y. [石耀輝]. (1999). Electric field distribution in metal/semi-insulating GaAs contacts investigated by positron lifetime technique. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122157
DegreeMaster of Philosophy
SubjectGallium arsenide semiconductors.
Positron annihilation.
spectrum analysis.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorBeling, CD-
dc.contributor.advisorFung, SHY-
dc.contributor.authorShek, Yiu-fai.-
dc.contributor.author石耀輝.-
dc.date.issued1999-
dc.identifier.citationShek, Y. [石耀輝]. (1999). Electric field distribution in metal/semi-insulating GaAs contacts investigated by positron lifetime technique. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122157-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31221579-
dc.subject.lcshGallium arsenide semiconductors.-
dc.subject.lcshPositron annihilation.-
dc.subject.lcshspectrum analysis.-
dc.titleElectric field distribution in metal/semi-insulating GaAs contacts investigated by positron lifetime technique-
dc.typePG_Thesis-
dc.identifier.hkulb3122157-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122157-
dc.date.hkucongregation1999-

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