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- Publisher Website: 10.1039/d2mh00466f
- Scopus: eid_2-s2.0-85137126669
- PMID: 35820170
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Article: A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing
Title | A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing |
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Authors | |
Issue Date | 2022 |
Citation | Materials Horizons, 2022, v. 9, n. 9, p. 2335-2344 How to Cite? |
Abstract | Synaptic transistors that accommodate concurrent signal transmission and learning in a neural network are attracting enormous interest for neuromorphic sensory processing. To remove redundant sensory information while keeping important features, artificial synaptic transistors with non-linear conductance are desired to apply filter processing to sensory inputs. Here, we report the realization of non-linear synapses using a two-dimensional van der Waals (vdW) heterostructure (MoS2/h-BN/graphene) based float gate memory device, in which the semiconductor channel is tailored via a surface acceptor (ZnPc) for subthreshold operation. In addition to usual synaptic plasticity, the memory device exhibits highly non-linear conductance (rectification ratio >106), allowing bidirectional yet only negative/inhibitory current to pass through. We demonstrate that in a lateral coupling network, such a float gate memory device resembles the key lateral inhibition function of horizontal cells for the formation of an ON-center/OFF-surround receptive field. When combined with synaptic plasticity, the lateral inhibition weights are further tunable to enable adjustable edge enhancement for early visual processing. Our results here hopefully open a new scheme toward early sensory perception via lateral inhibitory synaptic transistors. |
Persistent Identifier | http://hdl.handle.net/10722/335408 |
ISSN | 2021 Impact Factor: 15.717 2020 SCImago Journal Rankings: 4.322 |
DC Field | Value | Language |
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dc.contributor.author | Hu, Man | - |
dc.contributor.author | Yu, Jun | - |
dc.contributor.author | Chen, Yangyang | - |
dc.contributor.author | Wang, Siqi | - |
dc.contributor.author | Dong, Boyi | - |
dc.contributor.author | Wang, Han | - |
dc.contributor.author | He, Yuhui | - |
dc.contributor.author | Ma, Ying | - |
dc.contributor.author | Zhuge, Fuwei | - |
dc.contributor.author | Zhai, Tianyou | - |
dc.date.accessioned | 2023-11-17T08:25:40Z | - |
dc.date.available | 2023-11-17T08:25:40Z | - |
dc.date.issued | 2022 | - |
dc.identifier.citation | Materials Horizons, 2022, v. 9, n. 9, p. 2335-2344 | - |
dc.identifier.issn | 2051-6347 | - |
dc.identifier.uri | http://hdl.handle.net/10722/335408 | - |
dc.description.abstract | Synaptic transistors that accommodate concurrent signal transmission and learning in a neural network are attracting enormous interest for neuromorphic sensory processing. To remove redundant sensory information while keeping important features, artificial synaptic transistors with non-linear conductance are desired to apply filter processing to sensory inputs. Here, we report the realization of non-linear synapses using a two-dimensional van der Waals (vdW) heterostructure (MoS2/h-BN/graphene) based float gate memory device, in which the semiconductor channel is tailored via a surface acceptor (ZnPc) for subthreshold operation. In addition to usual synaptic plasticity, the memory device exhibits highly non-linear conductance (rectification ratio >106), allowing bidirectional yet only negative/inhibitory current to pass through. We demonstrate that in a lateral coupling network, such a float gate memory device resembles the key lateral inhibition function of horizontal cells for the formation of an ON-center/OFF-surround receptive field. When combined with synaptic plasticity, the lateral inhibition weights are further tunable to enable adjustable edge enhancement for early visual processing. Our results here hopefully open a new scheme toward early sensory perception via lateral inhibitory synaptic transistors. | - |
dc.language | eng | - |
dc.relation.ispartof | Materials Horizons | - |
dc.title | A non-linear two-dimensional float gate transistor as a lateral inhibitory synapse for retinal early visual processing | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1039/d2mh00466f | - |
dc.identifier.pmid | 35820170 | - |
dc.identifier.scopus | eid_2-s2.0-85137126669 | - |
dc.identifier.volume | 9 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 2335 | - |
dc.identifier.epage | 2344 | - |
dc.identifier.eissn | 2051-6355 | - |