Vertical ambipolar barrier transistor based on black phosphorous-tin selenide van der waals heterojunction

Abstract

Dynamically tunable characteristics of a heterojunction between two semiconducting materials offers the potential for building reconfigurable devices that can enable novel functionalities in electronic systems [1-3]. In this work, we study a novel junction between black phosphorus (BP) and tin selenide (SnSe), both with puckered orthorhombic crystal lattices. Due to the narrow bandgap of BP ∼0.3 eV and the ∼0.8 eV [4] bandgap in SnSe, the junction displays unique p+-p and n-p polarity reversibility subject to electrostatic bias. An ambipolar barrier transistor based on this junction is also demonstrated for the first time. This highly tunable junction can be very attractive for many applications in reconfigurable electronics.