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- Publisher Website: 10.1021/ja058836v
- Scopus: eid_2-s2.0-33645411647
- PMID: 16536515
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Article: DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high κ dielectrics for nanotube transistors with 60 mV/decade switching
Title | DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high κ dielectrics for nanotube transistors with 60 mV/decade switching |
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Authors | |
Issue Date | 2006 |
Citation | Journal of the American Chemical Society, 2006, v. 128, n. 11, p. 3518-3519 How to Cite? |
Abstract | For single-walled carbon nanotube (SWNT) field effect transistors, vertical scaling of high κ dielectrics by atomic layer deposition (ALD) currently stands at 8 nm with a subthreshold swing S ≈ 70-90 mV/decade at room temperature. ALD on as-grown pristine SWNTs is incapable of producing a uniform and conformal dielectric layer due to the lack of functional groups on nanotubes and because nucleation of an oxide dielectric layer in the ALD process hinges upon covalent chemisorption on reactive groups on surfaces. Here, we show that by noncovalent functionalization of SWNTs with poly-T DNA molecules (dT40-DNA), one can impart functional groups of sufficient density and stability for uniform and conformal ALD of high κ dielectrics on SWNTs with thickness down to 2-3 nm. This enables approaching the ultimate vertical scaling limit of nanotube FETs and reliably achieving S ≈ 60 mV/decade at room temperature, and S ≈ 50 mV/decade in the band-to-band tunneling regime of ambipolar transport. We have also carried out microscopy investigations to understand ALD processes on SWNTs with and without DNA functionalization. Copyright © 2006 American Chemical Society. |
Persistent Identifier | http://hdl.handle.net/10722/334127 |
ISSN | 2021 Impact Factor: 16.383 2020 SCImago Journal Rankings: 7.115 |
DC Field | Value | Language |
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dc.contributor.author | Lu, Yuerui | - |
dc.contributor.author | Bangsaruntip, Sarunya | - |
dc.contributor.author | Wang, Xinran | - |
dc.contributor.author | Zhang, Li | - |
dc.contributor.author | Nishi, Yoshio | - |
dc.contributor.author | Dai, Hongjie | - |
dc.date.accessioned | 2023-10-20T06:45:56Z | - |
dc.date.available | 2023-10-20T06:45:56Z | - |
dc.date.issued | 2006 | - |
dc.identifier.citation | Journal of the American Chemical Society, 2006, v. 128, n. 11, p. 3518-3519 | - |
dc.identifier.issn | 0002-7863 | - |
dc.identifier.uri | http://hdl.handle.net/10722/334127 | - |
dc.description.abstract | For single-walled carbon nanotube (SWNT) field effect transistors, vertical scaling of high κ dielectrics by atomic layer deposition (ALD) currently stands at 8 nm with a subthreshold swing S ≈ 70-90 mV/decade at room temperature. ALD on as-grown pristine SWNTs is incapable of producing a uniform and conformal dielectric layer due to the lack of functional groups on nanotubes and because nucleation of an oxide dielectric layer in the ALD process hinges upon covalent chemisorption on reactive groups on surfaces. Here, we show that by noncovalent functionalization of SWNTs with poly-T DNA molecules (dT40-DNA), one can impart functional groups of sufficient density and stability for uniform and conformal ALD of high κ dielectrics on SWNTs with thickness down to 2-3 nm. This enables approaching the ultimate vertical scaling limit of nanotube FETs and reliably achieving S ≈ 60 mV/decade at room temperature, and S ≈ 50 mV/decade in the band-to-band tunneling regime of ambipolar transport. We have also carried out microscopy investigations to understand ALD processes on SWNTs with and without DNA functionalization. Copyright © 2006 American Chemical Society. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of the American Chemical Society | - |
dc.title | DNA functionalization of carbon nanotubes for ultrathin atomic layer deposition of high κ dielectrics for nanotube transistors with 60 mV/decade switching | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/ja058836v | - |
dc.identifier.pmid | 16536515 | - |
dc.identifier.scopus | eid_2-s2.0-33645411647 | - |
dc.identifier.volume | 128 | - |
dc.identifier.issue | 11 | - |
dc.identifier.spage | 3518 | - |
dc.identifier.epage | 3519 | - |