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postgraduate thesis: A study of Mg doping in GaN during molecular beam epitaxy

TitleA study of Mg doping in GaN during molecular beam epitaxy
Authors
Advisors
Advisor(s):Xie, MH
Issue Date2001
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Pang, C. [彭澤厚]. (2001). A study of Mg doping in GaN during molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122661
DegreeMaster of Philosophy
SubjectMagnesium.
Gallium nitride.
Semiconductor doping.
Molecular beam epitaxy.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorXie, MH-
dc.contributor.authorPang, Chak-hau.-
dc.contributor.author彭澤厚-
dc.date.issued2001-
dc.identifier.citationPang, C. [彭澤厚]. (2001). A study of Mg doping in GaN during molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3122661-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31226619-
dc.subject.lcshMagnesium.-
dc.subject.lcshGallium nitride.-
dc.subject.lcshSemiconductor doping.-
dc.subject.lcshMolecular beam epitaxy.-
dc.titleA study of Mg doping in GaN during molecular beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb3122661-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3122661-
dc.date.hkucongregation2002-

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