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postgraduate thesis: Positron beam studies on the electric field at metal-semiinsulating GaAs interfaces

TitlePositron beam studies on the electric field at metal-semiinsulating GaAs interfaces
Authors
Issue Date1997
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Hu, Y. [胡一帆]. (1997). Positron beam studies on the electric field at metal-semiinsulating GaAs interfaces. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121531
DegreeMaster of Philosophy
SubjectSemiconductors.
Positron annihilation.
Dept/ProgramChemistry

 

DC FieldValueLanguage
dc.contributor.authorHu, Yi-fan.-
dc.contributor.author胡一帆-
dc.date.issued1997-
dc.identifier.citationHu, Y. [胡一帆]. (1997). Positron beam studies on the electric field at metal-semiinsulating GaAs interfaces. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3121531-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31215312-
dc.subject.lcshSemiconductors.-
dc.subject.lcshPositron annihilation.-
dc.titlePositron beam studies on the electric field at metal-semiinsulating GaAs interfaces-
dc.typePG_Thesis-
dc.identifier.hkulb3121531-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplineChemistry-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3121531-
dc.date.hkucongregation1998-

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