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postgraduate thesis: Investigation of inversion layer mobility in N-channel mosfets with thin gate oxide

TitleInvestigation of inversion layer mobility in N-channel mosfets with thin gate oxide
Authors
Issue Date1984
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Chan, T. [陳添華]. (1984). Investigation of inversion layer mobility in N-channel mosfets with thin gate oxide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3120651
DegreeMaster of Philosophy
SubjectThin films - Surfaces.
Metal oxide semiconductors.
Dept/ProgramElectrical Engineering

 

DC FieldValueLanguage
dc.contributor.authorChan, Tim-wah.-
dc.contributor.author陳添華-
dc.date.issued1984-
dc.identifier.citationChan, T. [陳添華]. (1984). Investigation of inversion layer mobility in N-channel mosfets with thin gate oxide. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3120651-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B31206517-
dc.subject.lcshThin films - Surfaces.-
dc.subject.lcshMetal oxide semiconductors.-
dc.titleInvestigation of inversion layer mobility in N-channel mosfets with thin gate oxide-
dc.typePG_Thesis-
dc.identifier.hkulb3120651-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplineElectrical Engineering-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.5353/th_b3120651-
dc.date.hkucongregation1984-

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