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postgraduate thesis: Optimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction

TitleOptimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction
Authors
Issue Date1998
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Ng, Y. [吳誼暉]. (1998). Optimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2979783
DegreeMaster of Philosophy
SubjectScanning tunneling microscopy.
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/32228
HKU Library Item IDb2979783

 

DC FieldValueLanguage
dc.contributor.authorNg, Yee-fai.-
dc.contributor.author吳誼暉-
dc.date.issued1998-
dc.identifier.citationNg, Y. [吳誼暉]. (1998). Optimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2979783-
dc.identifier.urihttp://hdl.handle.net/10722/32228-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B29797834-
dc.subject.lcshScanning tunneling microscopy.-
dc.titleOptimization of etching parameters for STM tips and an STM study of SiC (0001) [square root]3 x [square root]3 reconstruction-
dc.typePG_Thesis-
dc.identifier.hkulb2979783-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelMaster-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.description.naturetoc-
dc.identifier.doi10.5353/th_b2979783-
dc.date.hkucongregation1999-
dc.identifier.mmsid991009566649703414-

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