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Article: Extending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study

TitleExtending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study
Authors
Sang, PWang, QWei, WLi, YLi, CChen, J
Issue Date2022
Citation
IEEE Transactions on Electron Devices, 2022, v. 69, p. 3494-3498 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2022.3169122
Persistent Identifierhttp://hdl.handle.net/10722/322241
ISI Accession Number ID
WOS:000791708400001

 

DC FieldValueLanguage
dc.contributor.authorSang, P-
dc.contributor.authorWang, Q-
dc.contributor.authorWei, W-
dc.contributor.authorLi, Y-
dc.contributor.authorLi, C-
dc.contributor.authorChen, J-
dc.date.accessioned2022-11-14T08:17:46Z-
dc.date.available2022-11-14T08:17:46Z-
dc.date.issued2022-
dc.identifier.citationIEEE Transactions on Electron Devices, 2022, v. 69, p. 3494-3498-
dc.identifier.urihttp://hdl.handle.net/10722/322241-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.titleExtending the Scaling Limit of Silicon Channel Transistors Through hhk-Silicene Monolayer: A Computational Study-
dc.typeArticle-
dc.identifier.emailLi, C: canl@hku.hk-
dc.identifier.authorityLi, C=rp02706-
dc.identifier.doi10.1109/TED.2022.3169122-
dc.identifier.hkuros341829-
dc.identifier.volume69-
dc.identifier.spage3494-
dc.identifier.epage3498-
dc.identifier.isiWOS:000791708400001-

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