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postgraduate thesis: Heteroepitaxial growth of InN on GaN by molecular beam epitaxy

TitleHeteroepitaxial growth of InN on GaN by molecular beam epitaxy
Authors
Advisors
Advisor(s):Xie, MH
Issue Date2002
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Ng, Y. [吳誼暉]. (2002). Heteroepitaxial growth of InN on GaN by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2979784
DegreeDoctor of Philosophy
SubjectGallium nitride.
Nitrides.
Molecular beam epitaxy.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorXie, MH-
dc.contributor.authorNg, Yee-fai.-
dc.contributor.author吳誼暉-
dc.date.issued2002-
dc.identifier.citationNg, Y. [吳誼暉]. (2002). Heteroepitaxial growth of InN on GaN by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b2979784-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B29797846-
dc.subject.lcshGallium nitride.-
dc.subject.lcshNitrides.-
dc.subject.lcshMolecular beam epitaxy.-
dc.titleHeteroepitaxial growth of InN on GaN by molecular beam epitaxy-
dc.typePG_Thesis-
dc.identifier.hkulb2979784-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.description.naturetoc-
dc.identifier.doi10.5353/th_b2979784-
dc.date.hkucongregation2002-

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