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Postgraduate Thesis: Defect study of N-type 6H silicon carbide using positron lifetime spectroscopy
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TitleDefect study of N-type 6H silicon carbide using positron lifetime spectroscopy
 
AuthorsLam, Chi-hung
林志雄
 
Issue Date2002
 
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
AdvisorsLing, FCC
Fung, SHY
 
DegreeMaster of Philosophy
 
SubjectPositrons.
Silicon carbide - Spectra.
Semiconductors - Defects.
 
Dept/ProgramPhysics
 
DOIhttp://dx.doi.org/10.5353/th_b2975326
 
DC FieldValue
dc.contributor.advisorLing, FCC
 
dc.contributor.advisorFung, SHY
 
dc.contributor.authorLam, Chi-hung
 
dc.contributor.author林志雄
 
dc.date.hkucongregation2003
 
dc.date.issued2002
 
dc.description.naturepublished_or_final_version
 
dc.description.natureabstract
 
dc.description.naturetoc
 
dc.description.thesisdisciplinePhysics
 
dc.description.thesislevelmaster's
 
dc.description.thesisnameMaster of Philosophy
 
dc.identifier.doihttp://dx.doi.org/10.5353/th_b2975326
 
dc.identifier.hkulb2975326
 
dc.languageeng
 
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)
 
dc.relation.ispartofHKU Theses Online (HKUTO)
 
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.
 
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License
 
dc.source.urihttp://hub.hku.hk/bib/B29753260
 
dc.subject.lcshPositrons.
 
dc.subject.lcshSilicon carbide - Spectra.
 
dc.subject.lcshSemiconductors - Defects.
 
dc.titleDefect study of N-type 6H silicon carbide using positron lifetime spectroscopy
 
dc.typePG_Thesis
 
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