Supplementary

postgraduate thesis: Defect study of N-type 6H silicon carbide using positron lifetime spectroscopy

TitleDefect study of N-type 6H silicon carbide using positron lifetime spectroscopy
Authors
Advisors
Issue Date2002
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
DegreeMaster of Philosophy
SubjectPositrons.
Silicon carbide - Spectra.
Semiconductors - Defects.
Dept/ProgramPhysics

 

DC FieldValueLanguage
dc.contributor.advisorLing, FCC-
dc.contributor.advisorFung, SHY-
dc.contributor.authorLam, Chi-hung-
dc.contributor.author林志雄-
dc.date.issued2002-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.source.urihttp://hub.hku.hk/bib/B29753260-
dc.subject.lcshPositrons.-
dc.subject.lcshSilicon carbide - Spectra.-
dc.subject.lcshSemiconductors - Defects.-
dc.titleDefect study of N-type 6H silicon carbide using positron lifetime spectroscopy-
dc.typePG_Thesis-
dc.identifier.hkulb2975326-
dc.description.thesisnameMaster of Philosophy-
dc.description.thesislevelmaster's-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.description.naturetoc-
dc.identifier.doi10.5353/th_b2975326-
dc.date.hkucongregation2003-

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