File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1103/PhysRevB.67.134114
- Scopus: eid_2-s2.0-0038101566
- WOS: WOS:000182604100041
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Molecular dynamics study of the threshold displacement energy in vanadium
| Title | Molecular dynamics study of the threshold displacement energy in vanadium |
|---|---|
| Authors | |
| Issue Date | 2003 |
| Citation | Physical Review B - Condensed Matter and Materials Physics, 2003, v. 67, n. 13, article no. 134114 How to Cite? |
| Abstract | The threshold displacement energy (TDE) is calculated for vanadium as a function of temperature and orientation by molecular dynamics simulations. The TDE varies from 13 to 51 eV, depending on orientation and is nearly temperature independent between 100 and 900 K. The lowest TDE is in the 〈100〉 direction. We characterize the defects associated with the displacement simulations and found that they consist of vacancies and 〈111〉-split dumbbells. © 2003 The American Physical Society. |
| Persistent Identifier | http://hdl.handle.net/10722/303744 |
| ISSN | 2014 Impact Factor: 3.736 |
| ISI Accession Number ID | |
| Errata |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Zepeda-Ruiz, L. A. | - |
| dc.contributor.author | Han, S. | - |
| dc.contributor.author | Srolovitz, D. J. | - |
| dc.contributor.author | Car, R. | - |
| dc.contributor.author | Wirth, B. D. | - |
| dc.date.accessioned | 2021-09-15T08:25:56Z | - |
| dc.date.available | 2021-09-15T08:25:56Z | - |
| dc.date.issued | 2003 | - |
| dc.identifier.citation | Physical Review B - Condensed Matter and Materials Physics, 2003, v. 67, n. 13, article no. 134114 | - |
| dc.identifier.issn | 1098-0121 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/303744 | - |
| dc.description.abstract | The threshold displacement energy (TDE) is calculated for vanadium as a function of temperature and orientation by molecular dynamics simulations. The TDE varies from 13 to 51 eV, depending on orientation and is nearly temperature independent between 100 and 900 K. The lowest TDE is in the 〈100〉 direction. We characterize the defects associated with the displacement simulations and found that they consist of vacancies and 〈111〉-split dumbbells. © 2003 The American Physical Society. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Physical Review B - Condensed Matter and Materials Physics | - |
| dc.title | Molecular dynamics study of the threshold displacement energy in vanadium | - |
| dc.type | Article | - |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1103/PhysRevB.67.134114 | - |
| dc.identifier.scopus | eid_2-s2.0-0038101566 | - |
| dc.identifier.volume | 67 | - |
| dc.identifier.issue | 13 | - |
| dc.identifier.spage | article no. 134114 | - |
| dc.identifier.epage | article no. 134114 | - |
| dc.identifier.eissn | 1550-235X | - |
| dc.identifier.isi | WOS:000182604100041 | - |
| dc.relation.erratum | doi:10.1103/PhysRevB.70.109901 | - |
| dc.relation.erratum | eid:eid_2-s2.0-19744381338 | - |