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- Publisher Website: 10.1103/PhysRevLett.91.096101
- Scopus: eid_2-s2.0-0142120654
- PMID: 14525195
- WOS: WOS:000185235000034
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Article: Origins of Growth Stresses in Amorphous Semiconductor Thin Films
Title | Origins of Growth Stresses in Amorphous Semiconductor Thin Films |
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Authors | |
Issue Date | 2003 |
Citation | Physical Review Letters, 2003, v. 91, n. 9, article no. 096101 How to Cite? |
Abstract | Stress evolution during deposition of amorphous Si and Ge thin films is remarkably similar to that observed for polycrystalline films. Amorphous semiconductors were used as model materials to study the origins of deposition stresses in continuous films, where suppression of both strain relaxation and epitaxial strain inheritance provides considerable simplification. Our data show that bulk compression is established by surface stress, while a subsequent return to tensile stress arises from elastic coalescence processes occurring on the kinetically roughened surface. © 2003 The American Physical Society. |
Persistent Identifier | http://hdl.handle.net/10722/303222 |
ISSN | 2021 Impact Factor: 9.185 2020 SCImago Journal Rankings: 3.688 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Floro, J. A. | - |
dc.contributor.author | Kotula, P. G. | - |
dc.contributor.author | Seel, S. C. | - |
dc.contributor.author | Srolovitz, D. J. | - |
dc.date.accessioned | 2021-09-15T08:24:52Z | - |
dc.date.available | 2021-09-15T08:24:52Z | - |
dc.date.issued | 2003 | - |
dc.identifier.citation | Physical Review Letters, 2003, v. 91, n. 9, article no. 096101 | - |
dc.identifier.issn | 0031-9007 | - |
dc.identifier.uri | http://hdl.handle.net/10722/303222 | - |
dc.description.abstract | Stress evolution during deposition of amorphous Si and Ge thin films is remarkably similar to that observed for polycrystalline films. Amorphous semiconductors were used as model materials to study the origins of deposition stresses in continuous films, where suppression of both strain relaxation and epitaxial strain inheritance provides considerable simplification. Our data show that bulk compression is established by surface stress, while a subsequent return to tensile stress arises from elastic coalescence processes occurring on the kinetically roughened surface. © 2003 The American Physical Society. | - |
dc.language | eng | - |
dc.relation.ispartof | Physical Review Letters | - |
dc.title | Origins of Growth Stresses in Amorphous Semiconductor Thin Films | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1103/PhysRevLett.91.096101 | - |
dc.identifier.pmid | 14525195 | - |
dc.identifier.scopus | eid_2-s2.0-0142120654 | - |
dc.identifier.volume | 91 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | article no. 096101 | - |
dc.identifier.epage | article no. 096101 | - |
dc.identifier.eissn | 1079-7114 | - |
dc.identifier.isi | WOS:000185235000034 | - |