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- Publisher Website: 10.1063/1.4909514
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Article: Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography
Title | Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography |
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Authors | |
Issue Date | 2015 |
Citation | Applied Physics Letters, 2015, v. 106, n. 7, article no. 072104 How to Cite? |
Abstract | Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering. |
Persistent Identifier | http://hdl.handle.net/10722/302175 |
ISSN | 2021 Impact Factor: 3.971 2020 SCImago Journal Rankings: 1.182 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Tang, Fengzai | - |
dc.contributor.author | Zhu, Tongtong | - |
dc.contributor.author | Oehler, Fabrice | - |
dc.contributor.author | Fu, Wai Yuen | - |
dc.contributor.author | Griffiths, James T. | - |
dc.contributor.author | Massabuau, Fabien C.P. | - |
dc.contributor.author | Kappers, Menno J. | - |
dc.contributor.author | Martin, Tomas L. | - |
dc.contributor.author | Bagot, Paul A.J. | - |
dc.contributor.author | Moody, Michael P. | - |
dc.contributor.author | Oliver, Rachel A. | - |
dc.date.accessioned | 2021-08-30T13:57:57Z | - |
dc.date.available | 2021-08-30T13:57:57Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Applied Physics Letters, 2015, v. 106, n. 7, article no. 072104 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/302175 | - |
dc.description.abstract | Atom probe tomography (APT) has been used to characterize the distribution of In atoms within non-polar a-plane InGaN quantum wells (QWs) grown on a GaN pseudo-substrate produced using epitaxial lateral overgrowth. Application of the focused ion beam microscope enabled APT needles to be prepared from the low defect density regions of the grown sample. A complementary analysis was also undertaken on QWs having comparable In contents grown on polar c-plane sample pseudo-substrates. Both frequency distribution and modified nearest neighbor analyses indicate a statistically non-randomized In distribution in the a-plane QWs, but a random distribution in the c-plane QWs. This work not only provides insights into the structure of non-polar a-plane QWs but also shows that APT is capable of detecting as-grown nanoscale clustering in InGaN and thus validates the reliability of earlier APT analyses of the In distribution in c-plane InGaN QWs which show no such clustering. | - |
dc.language | eng | - |
dc.relation.ispartof | Applied Physics Letters | - |
dc.title | Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.4909514 | - |
dc.identifier.scopus | eid_2-s2.0-84923380495 | - |
dc.identifier.volume | 106 | - |
dc.identifier.issue | 7 | - |
dc.identifier.spage | article no. 072104 | - |
dc.identifier.epage | article no. 072104 | - |
dc.identifier.isi | WOS:000350227300021 | - |