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Article: Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
Title | Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate |
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Authors | |
Issue Date | 2021 |
Publisher | Nature Research: Fully open access journals. The Journal's web site is located at https://www.nature.com/npj2dmaterials/ |
Citation | npj 2D Materials and Applications, 2021, v. 5 n. 1, p. article no. 38 How to Cite? |
Abstract | Lateral superlattices in 2D materials provide a powerful platform for exploring intriguing quantum phenomena, which can be realized through the proximity coupling in forming moiré pattern with another layer. This approach, however, is invasive, material-specific, and requires small lattice mismatch and suitable band alignment, largely limited to graphene and transition metal dichalcogenides (TMDs). Hexagonal boron nitride (h-BN) of antiparallel (AA′) stacking has been an indispensable building block, as dielectric substrates and capping layers for realizing high-quality van der Waals devices. There is also emerging interest on parallelly aligned h-BN of Bernal (AB) stacking, where the broken inversion and mirror symmetries lead to out-of-plane electrical polarization. Here we show the that laterally patterned electrical polarization at a nearly parallel interface within the h-BN substrate can be exploited to create noninvasively a universal superlattice potential in general 2D materials. The feasibility is demonstrated by first principle calculations for monolayer MoSe2, black phosphorus, and antiferromagnetic MnPSe3 on such h-BN. The potential strength can reach 200 meV, customizable in this range through choice of distance of target material from the interface in h-BN. We also find sizable out-of-plane electric field at the h-BN surface, which can realize superlattice potential for interlayer excitons in TMD bilayers as well as dipolar molecules. The idea is further generalized to AB-stacked h-BN subject to torsion with adjacent layers all twisted with an angle, which allows the potential and field strength to be scaled up with film thickness, saturating to a quasi-periodic one with chiral structure. |
Persistent Identifier | http://hdl.handle.net/10722/299738 |
ISSN | 2023 Impact Factor: 9.1 2023 SCImago Journal Rankings: 2.460 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhao, P | - |
dc.contributor.author | XIAO, C | - |
dc.contributor.author | Yao, W | - |
dc.date.accessioned | 2021-05-26T03:28:22Z | - |
dc.date.available | 2021-05-26T03:28:22Z | - |
dc.date.issued | 2021 | - |
dc.identifier.citation | npj 2D Materials and Applications, 2021, v. 5 n. 1, p. article no. 38 | - |
dc.identifier.issn | 2397-7132 | - |
dc.identifier.uri | http://hdl.handle.net/10722/299738 | - |
dc.description.abstract | Lateral superlattices in 2D materials provide a powerful platform for exploring intriguing quantum phenomena, which can be realized through the proximity coupling in forming moiré pattern with another layer. This approach, however, is invasive, material-specific, and requires small lattice mismatch and suitable band alignment, largely limited to graphene and transition metal dichalcogenides (TMDs). Hexagonal boron nitride (h-BN) of antiparallel (AA′) stacking has been an indispensable building block, as dielectric substrates and capping layers for realizing high-quality van der Waals devices. There is also emerging interest on parallelly aligned h-BN of Bernal (AB) stacking, where the broken inversion and mirror symmetries lead to out-of-plane electrical polarization. Here we show the that laterally patterned electrical polarization at a nearly parallel interface within the h-BN substrate can be exploited to create noninvasively a universal superlattice potential in general 2D materials. The feasibility is demonstrated by first principle calculations for monolayer MoSe2, black phosphorus, and antiferromagnetic MnPSe3 on such h-BN. The potential strength can reach 200 meV, customizable in this range through choice of distance of target material from the interface in h-BN. We also find sizable out-of-plane electric field at the h-BN surface, which can realize superlattice potential for interlayer excitons in TMD bilayers as well as dipolar molecules. The idea is further generalized to AB-stacked h-BN subject to torsion with adjacent layers all twisted with an angle, which allows the potential and field strength to be scaled up with film thickness, saturating to a quasi-periodic one with chiral structure. | - |
dc.language | eng | - |
dc.publisher | Nature Research: Fully open access journals. The Journal's web site is located at https://www.nature.com/npj2dmaterials/ | - |
dc.relation.ispartof | npj 2D Materials and Applications | - |
dc.rights | npj 2D Materials and Applications. Copyright © Nature Research: Fully open access journals. | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.title | Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate | - |
dc.type | Article | - |
dc.identifier.email | Zhao, P: peizhao@hku.hk | - |
dc.identifier.email | Yao, W: wangyao@hku.hk | - |
dc.identifier.authority | Yao, W=rp00827 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1038/s41699-021-00221-4 | - |
dc.identifier.scopus | eid_2-s2.0-85104227479 | - |
dc.identifier.hkuros | 322531 | - |
dc.identifier.volume | 5 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | article no. 38 | - |
dc.identifier.epage | article no. 38 | - |
dc.identifier.isi | WOS:000639934400002 | - |
dc.publisher.place | United Kingdom | - |